Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Authors: Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park

Source: Journal of Information Display, Vol 25, Iss 3, Pp 295-303 (2024)

Subject Terms: Bilayer structure, thin-film transistor (TFT), plasma-enhanced atomic layer deposition (PEALD), compositional control, mobility-stability trade-off, Computer engineering. Computer hardware, TK7885-7895

File Description: electronic resource

Relation: https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606

Access URL: https://doaj.org/article/c60b76b489494750a871d21e03977df0

The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties

Authors: Jozeph Park, Hyun-Jun Jeong, Hyun-Mo Lee, Ho-Hyun Nahm, Jin-Seong Park

Source: Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)

Subject Terms: Medicine, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2045-2322

Access URL: https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d

Numerical Simulations of the Impact and Spreading of a Particulate Drop on a Solid Substrate.

Authors: Hyun Jun Jeong¹, Wook Ryol Hwang¹ wrhwang@gnu.ac.kr, Chongyoup Kim²

Source: Modelling & Simulation in Engineering. 2012, p1-10. 10p. 5 Diagrams, 3 Graphs.

Subject Terms: *COMPUTER simulation, *SOLID surfacing materials, *DEFORMATIONS (Mechanics), *REYNOLDS number, *HYDRODYNAMICS, *FINITE element method, *NAVIER-Stokes equations, *ENERGY dissipation

Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen.

Authors: Hyun-Mo Lee¹, Kyung-Chul Ok¹, Hyun-Jun Jeong¹, Jin-Seong Park¹, jsparklime@hanyang.ac.kr, Junhyung Lim², Park, Jozeph³, jozeph.park@gmail.com

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar/Apr2017, Vol. 35 Issue 2, p1-5, 5p, 1 Chart, 4 Graphs

Recent review on improving mechanical durability for flexible oxide thin film transistors.

Authors: Ki-Lim Han¹, Hyun-Jun Jeong¹, Beom-Su Kim¹, Won-Bum Lee¹, Jin-Seong Park¹ jsparklime@hanyang.ac.kr

Source: Journal of Physics D: Applied Physics. 11/27/2019, Vol. 52 Issue 48, p1-1. 1p.

Subject Terms: *OXIDE coating, *SEMICONDUCTOR thin films, *THIN film transistors, *AMORPHOUS semiconductors, *BENDING stresses, *BUFFER layers

Quantitative analysis of interface trap recovery caused by repetitive bending stress in flexible oxide thin-film transistors.

Authors: Hyun-Jun Jeong, Beom-Su Kim, Ki-Lim Han, Saeroonter Oh, Jin-Seong Park

Source: Japanese Journal of Applied Physics; 5/1/2019, Vol. 58 Issue 5, p1-1, 1p