1200 V GaN-on-Si Junction Barrier Schottky (JBS) Diodes by an E-Mode-Compatibe Process

Authors: Zou, Wensong, Chen, Jiawei, Zhou, David, Zhang, Jinshi, Chen, Ran, Liu, Xiong, Hua, Mengyuan, Ma, Jun

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Edge-Dependent Step-Flow Growth Mechanism in $\beta$-Ga$_{2}$O$_{3}$ (100) Facet at the Atomic Level

Authors: Li, Qi, Zhao, Junlei, Lin, Na, Cheng, Xiufeng, Zhao, Xian, Liu, Zhaojun, Jia, Zhitai, Hua, Mengyuan

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2501.09427

Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC

Authors: Zheng, Zheyang, Liao, Hang, Feng, Sirui, Yang, Yingchen, Geng, Yutao, Chen, Tao, Chen, Junting, Hua, Mengyuan, Chen, Kevin J.

Source: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :291-294 Jun, 2024

Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Orientation-dependent surface radiation damage in $\beta$-Ga2O3 explored by multiscale atomic simulations

Authors: Liu, Taiqiao, Li, Zeyuan, Zhao, Junlei, Fei, Xiaoyu, Feng, Jiaren, Zuo, Yijing, Hua, Mengyuan, Guo, Yuzheng, Liu, Sheng, Zhang, Zhaofu

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2408.07270

Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform

Authors: Tang, Jinjin, Jiang, Zuoheng, Wang, Chengcai, Chen, Junting, Chen, Haohao, Zhang, Yihan, Zheng, Zheyang, Wang, Xinyu, Ma, Jun, Zhao, Junlei, Liu, Jianxun, Sun, Qian, Hua, Mengyuan

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Authors: Feng, Sirui, Zheng, Zheyang, Wang, Yuru, Lyu, Gang, Liu, Kai, Cheng, Yan, Chen, Junting, Chen, Tao, Zhang, Li, Song, Wenjie, Liao, Hang, Ng, Yat Hon, Hua, Mengyuan, Cheng, Kai, Wei, Jin, Chen, Kevin J.

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

69.7-PFLOPS Extreme Scale Earthquake Simulation with Crossing Multi-faults and Topography on Sunway

Authors: Wan, Wubing, Gan, Lin, Wang, Wenqiang, Yin, Zekun, Tian, Haodong, Zhang, Zhenguo, Wang, Yinuo, Hua, Mengyuan, Liu, Xiaohui, Xiang, Shengye, He, Zhongqiu, Wang, Zijia, Gao, Ping, Duan, Xiaohui, Liu, Weiguo, Xue, Wei, Fu, Haohuan, Yang, Guangwen, Chen, Xiaofei, Song, Zeyu, Chen, Yaojian, Liu, Xin, Zhang, Wei

Source: SC23: International Conference for High Performance Computing, Networking, Storage and Analysis High Performance Computing, Networking, Storage and Analysis, SC23: International Conference for. :1-16 Nov, 2023

Relation: SC23: International Conference for High Performance Computing, Networking, Storage and Analysis

Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications

Authors: Chen, Junting, Wang, Chengcai, Jiang, Zuoheng, Hua, Mengyuan

Source: 2023 IEEE 15th International Conference on ASIC (ASICON) ASIC (ASICON), 2023 IEEE 15th International Conference on. :1-4 Oct, 2023

Relation: 2023 IEEE 15th International Conference on ASIC (ASICON)

Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

Authors: Wang, Xinyu, Jiang, Zuoheng, Chen, Junting, Zhao, Junlei, Wang, Han, Wang, Chengcai, Chen, Haohao, Ma, Jun, Chen, Xiaolong, Hua, Mengyuan

Source: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :115-118 May, 2023

Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Switching Performance of GaN $p$-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation

Authors: Chen, Junting, Chen, Tao, Jiang, Zuoheng, Wang, Chengcai, Zheng, Zheyang, Wei, Jin, Chen, Kevin J., Hua, Mengyuan

Source: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :107-110 May, 2023

Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Impacts of $n$-GaN Doping Concentration on Gate Reliability of $p-n$ Junction/AlGaN/GaN HEMTs

Authors: Wang, Chengcai, Chen, Haohao, Jiang, Zuoheng, Chen, Junting, Hua, Mengyuan

Source: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :16-19 May, 2023

Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

Authors: Wu, Yanlin, Nuo, Muqin, Yang, Junjie, Zheng, Zheyang, Zhang, Li, Chen, Kevin J., Hua, Mengyuan, Hao, Yilong, Yang, Xuelin, Shen, Bo, Wang, Maojun, Wei, Jin

Source: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :378-381 May, 2023

Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide

Authors: Zhao, Junlei, Fernández, Javier García, Azarov, Alexander, He, Ru, Prytz, Øystein, Nordlund, Kai, Hua, Mengyuan, Djurabekova, Flyura, Kuznetsov, Andrej

Subject Terms: Condensed Matter - Materials Science, Physics - Computational Physics

Access URL: http://arxiv.org/abs/2401.07675

Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors

Authors: Chen, Haohao, Chen, Junting, Wang, Chengcai, Jiang, Zuoheng, Hua, Mengyuan

Source: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023

Relation: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Orientation-Dependent Atomic-Scale Mechanism of $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth

Authors: Zhang, Jun, Zhao, Junlei, Chen, Junting, Hua, Mengyuan

Source: Appl. Phys. Lett. 124, 022102 (2024)

Subject Terms: Condensed Matter - Materials Science, Physics - Computational Physics

Access URL: http://arxiv.org/abs/2309.09629

Recent Progress in GaON for Performance Enhancement of GaN-based Devices

Authors: Hua, Mengyuan, Chen, Junting, Wang, Chengcai

Source: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022

Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability

Authors: Hua, Mengyuan, Chen, Junting, Wang, Chengcai, Li, Lingling, Liu, Ling, Zheng, Zheyang, Chen, Kevin J.

Source: 2021 IEEE 14th International Conference on ASIC (ASICON) ASIC (ASICON), 2021 IEEE 14th International Conference on. :1-4 Oct, 2021

Relation: 2021 IEEE 14th International Conference on ASIC (ASICON)

Pathways to Successful Transformation of Basic Education Amid Educational Crises: A Case Study of the Experiments in Educational Reform by 271 Education Group

Authors: Hua, Mengyuan

Source: Science Insights Education Frontiers. 2022 13(2):1899-1909.

Peer Reviewed: Y

Page Count: 11

Descriptors: Educational Change, Foreign Countries, Elementary Education, Environmental Education, Sustainability, Curriculum Development, Authentic Learning, Cooperative Learning, Faculty Development, Educational Research

Geographic Terms: China

Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT

Authors: Jiang, Zuoheng, Hua, Mengyuan, Huang, Xinran, Li, Lingling, Chen, Junting, Chen, Kevin J.

Source: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :47-50 May, 2021

Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Complex $\mathrm{Ga}_{2}\mathrm{O}_{3}$ Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials

Authors: Zhao, Junlei, Byggmästar, Jesper, He, Huan, Nordlund, Kai, Djurabekova, Flyura, Hua, Mengyuan

Source: npj Computational Materials 9, 159 (2023)

Subject Terms: Condensed Matter - Materials Science, Physics - Computational Physics

Access URL: http://arxiv.org/abs/2212.03096