Optimization techniques for two-way relaying based multiuser multiplexing

Authors: Hu, J.C., Xiong, Z., Rahulamathavan, Y., Cumanan, K., Lambotharan, S.

Source: 2010 IEEE 11th International Workshop on Signal Processing Advances in Wireless Communications (SPAWC) Signal Processing Advances in Wireless Communications (SPAWC), 2010 IEEE Eleventh International Workshop on. :1-5 Jun, 2010

Relation: 2010 IEEE 11th International Workshop on Signal Processing Advances in Wireless Communications (SPAWC 2010)

Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation

Authors: Nicollian, P.E., Baldwin, G.C., Eason, K.N., Grider, D.T., Hattangady, S.V., Hu, J.C., Hunter, W.R., Rodder, M., Rotondaro, A.L.P.

Source: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :545-548 2000

Relation: International Electron Devices Meeting. Technical Digest. IEDM

Experimental evidence for voltage driven breakdown models in ultrathin gate oxides

Authors: Nicollian, P.E., Hunter, W.R., Hu, J.C.

Source: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Reliability physics Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International. :7-15 2000

Relation: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual

A double perovskite LaFe1-xSnxO3 nanocomposite modified by Ag for fast and accurate methanol detection

Authors: Rong, Q., Zhang, Y.M., Hu, J.C., Wang, H.P., Zhu, Z.Q., Zhang, J., Liu, Qingju ^*

Source: In Materials Research Bulletin December 2020 132

A 1.2V, sub-0.09 /spl mu/m gate length CMOS technology

Authors: Mehrotra, M., Hu, J.C., Jain, A., Shiau, W., Reddy, V., Aur, S., Rodder, M.

Source: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :419-422 1999

Relation: International Electron Devices Meeting 1999. Technical Digest

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Authors: Chatterjee, A., Chapman, R.A., Joyner, K., Otobe, M., Hattangady, S., Bevan, M., Brown, G.A., Yang, H., He, Q., Rogers, D., Fang, S.J., Kraft, R., Rotondaro, A.L.P., Terry, M., Brennan, K., Aur, S.-W., Hu, J.C., Tsai, H.-L., Jones, P., Wilk, G., Aoki, M., Rodder, M., Chen, I.-C.

Source: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :777-780 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

Techniques for developing and measuring high performance Web servers over high speed networks

Authors: Hu, J.C., Mungee, S., Schmidt, D.C.

Source: Proceedings. IEEE INFOCOM '98, the Conference on Computer Communications. Seventeenth Annual Joint Conference of the IEEE Computer and Communications Societies. Gateway to the 21st Century (Cat. No.98 INFOCOM '98 INFOCOM '98. Seventeenth Annual Joint Conference of the IEEE Computer and Communications Societies. Proceedings. IEEE. 3:1222-1231 vol.3 1998

Relation: Proceedings IEEE INFOCOM'98 Conference on Computer Communications Seventeenth Annual Joint Conference of the IEEE Computer and Communications Societies Gateway to the 21st Century

A 0.10 /spl mu/m gate length CMOS technology with 30 /spl Aring/ gate dielectric for 1.0 V-1.5 V applications

Authors: Rodder, M., Hanratty, M., Rogers, D., Laaksonen, T., Hu, J.C., Murtaza, S., Chao, C.-P., Hattangady, S., Aur, S., Amerasekera, A., Chen, I.-C.

Source: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :223-226 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

Authors: Yang, H., Brown, G.A., Hu, J.C., Lu, J.P., Kraft, R., Rotondaro, A.L.P., Hattangady, S.V., Chen, I.-C., Luttmer, J.D., Chapman, R.A., Chen, P.J., Tsai, H.L., Amirhekmat, B., Magel, L.K.

Source: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :459-462 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

Authors: Hu, J.C., Yang, H., Kraft, R., Rotondaro, A.L.P., Hattangady, S., Lee, W.W., Chapman, R.A., Chao, C.-P., Chatterjee, A., Hanratty, M., Rodder, M., Chen, I.-C.

Source: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :825-828 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

Authors: Chatterjee, A., Chapman, R.A., Dixit, G., Kuehne, J., Hattangady, S., Yang, H., Brown, G.A., Aggarwal, R., Erdogan, U., He, Q., Hanratty, M., Rogers, D., Murtaza, S., Fang, S.J., Kraft, R., Rotondaro, A.L.P., Hu, J.C., Terry, M., Lee, W., Fernando, C., Konecni, A., Wells, G., Frystak, D., Bowen, C., Rodder, M., Chen, I.-C.

Source: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :821-824 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

Measuring the impact of event dispatching and concurrency models on Web server performance over high-speed networks

Authors: Hu, J.C., Pyarali, I., Schmidt, D.C.

Source: GLOBECOM 97. IEEE Global Telecommunications Conference. Conference Record GLOBECOM 97 Global Telecommunications Conference, 1997. GLOBECOM '97., IEEE. 3:1924-1931 vol.3 1997

Relation: GLOBECOM 97. IEEE Global Telecommunications Conference. Conference Record

Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

Authors: Tseng, W.H., Yang, C.M., Wu, W.J., Wang, C.Y., Hu, J.C., Hsiung, C.H., Lin, Y.L., Bao, T.I., Yang, J.L., Shieh, J.H., Jeng, C.C., Lin, J.C., Huang, I.L., Chen, H.C., Lo, H., Wang, J., Yu, C.H., Liang, M.S.

Source: Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Interconnect technology Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International. :165-167 2005

Relation: Proceedings of the IEEE 2005 International Interconnect Technology Conference

A sub-0.1 /spl mu/m gate length CMOS technology for high performance (1.5 V) and low power (1.0 V)

Authors: Redder, M., Hong, Q.Z., Nandakumar, M., Aur, S., Hu, J.C., Chen, I.-C.

Source: International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :563-566 1996

Relation: International Electron Devices Meeting. Technical Digest

Retrieval of bare soil surface parameters from simulated data using neural networks combined with IEM

Authors: Zhao, K.G., Shi, J.C., Zhang, L.X., Jiang, L.M., Zhang, Z.J., Qin, J., Yao, Y.J., Hu, J.C.

Source: IGARSS 2003. 2003 IEEE International Geoscience and Remote Sensing Symposium. Proceedings (IEEE Cat. No.03CH37477) Geoscience and remote sensing symposium Geoscience and Remote Sensing Symposium, 2003. IGARSS '03. Proceedings. 2003 IEEE International. 6:3881-3883 vol.6 2003

Relation: IGARSS 2003. 2003 IEEE International Geoscience and Remote Sensing Symposium. Proceedings

Production Worthy 3D Interconnect Technology

Authors: Tu, H.J., Wu, W.J., Hu, J.C., Yang, K.F., Chang, H.B., Chiou, W.C., Yu, C.H

Source: 2008 International Interconnect Technology Conference Interconnect Technology Conference, 2008. IITC 2008. International. :37-39 Jun, 2008

Relation: 2008 International Interconnect Technology Conference - IITC

Androgen deprivation therapy and risk of rheumatoid arthritis in patients with localized prostate cancer

Authors: Yang, D.D., Krasnova, A., Nead, K.T., Choueiri, T.K., Hu, J.C., Hoffman, K.E., Yu, J.B., Spratt, D.E., Feng, F.Y., Trinh, Q.-D., Nguyen, P.L. ^*

Source: In Annals of Oncology February 2018 29(2):386-391

Racial disparities in prostate cancer outcome among prostate-specific antigen screening eligible populations in the United States

Authors: Mahal, B.A., Chen, Y.-W., Muralidhar, V., Mahal, A.R., Choueiri, T.K., Hoffman, K.E., Hu, J.C., Sweeney, C.J., Yu, J.B., Feng, F.Y., Kim, S.P., Beard, C.J., Martin, N.E., Trinh, Q.-D., Nguyen, P.L. ^*

Source: In Annals of Oncology May 2017 28(5):1098-1104

ENAM Mutations Can Cause Hypomaturation Amelogenesis Imperfecta.

Authors: Wang, Y.-L., Lin, H.-C., Liang, T., Lin, J.C.-Y., Simmer, J.P., Hu, J.C.-C., Wang, S.-K.

Source: Journal of Dental Research; Jun2024, Vol. 103 Issue 6, p662-671, 10p

Subject Terms: CELL death, AMELOGENESIS imperfecta, UNFOLDED protein response, MUTANT proteins, EXTRACELLULAR matrix proteins, PROTEIN overexpression, TOOTH demineralization

Sub-0.1 /spl mu/m CMOS with source/drain extension spacer formed using nitrogen implantation prior to thick gate re-oxidation

Authors: Hu, J.C., Chatterjee, A., Mehrotra, M., Xu, J., Shiau, W.-T., Rodder, M.

Source: 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) VLSI technology VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on. :188-189 2000

Relation: 2000 Symposium on VLSI Technology. Digest of Technical Papers