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1Conference
Authors: Liu, C.-H., Hsiang, K.-Y., Chang, F.-S., Chang, Y.-T., Liu, C. W., Lee, M. H.
Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024
Relation: 2024 IEEE International Electron Devices Meeting (IEDM)
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2Conference
Authors: Hsiang, K.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Li, Z.-X., Liu, C. W., Hou, T.-H., Su, P., Lee, M. H.
Source: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023
Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)
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3Report
Authors: Tsai, Y. -T., Liu, C. -R., Chen, Y. -T., Wang, S. -M., Chen, Z. -K., Pai, C. -S., Haung, Z. -R., Chang, F. -S., Li, Z. -X., Hsiang, K. -Y., Lee, M. -H., Tang, Y. -T.
Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics
Access URL: http://arxiv.org/abs/2307.04404
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4Report
Authors: Lee, S. -C., Chen, Y. -T., Liu, C. -R., Wang, S. -M., Tang, Y. -T., Chang, F. -S., Li, Z. -X., Hsiang, K. -Y., Lee, M. -H.
Subject Terms: Condensed Matter - Materials Science
Access URL: http://arxiv.org/abs/2307.01114
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5Conference
Authors: Lee, J.-Y., Chang, F.-S., Hsiang, K.-Y., Chen, P.-H., Luo, Z.-F., Li, Z.-X., Tsai, J.-H., Liu, C. W., Lee, M. H.
Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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6Conference
Authors: Hsiang, K.-Y., Lee, J.-Y., Chang, F.-S., Lou, Z.-F., Li, Z.-X., Li, Z.-H., Chen, J.-H., Liu, C. W., Hou, T.-H., Lee, M. H.
Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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7Conference
Authors: Liao, C.-Y., Hsiang, K.-Y., Lou, Z. -F., Tseng, H.-C., Lin, C.-Y., Li, Z.-X., Hsieh, F.-C., Wang, C.-C., Chang, F.-S., Ray, W.-C., Tseng, Y.-Y., Chang, S. T., Chen, T.-C., Lee, M. H.
Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :1-2 Jun, 2022
Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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8Conference
Authors: Chiang, H. -L., Wang, J.-F., Lin, K. -H., Nien, C.-H., Wu, J. -J., Hsiang, K.-Y., Chuu, C. -P., Chen, Y.-W., Zhang, X. W., Liu, C. W., Wang, Tahui, Wang, C. -C., Lee, M.-H., Chang, M. -F., Chang, C.-S., Chen, T. C.
Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :361-362 Jun, 2022
Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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9Conference
Authors: Liao, C.-Y., Hsiang, K.-Y., Lou, Z.-F., Lin, C.-Y., Ray, W.-C., Chang, F.-S., Wang, C.-C., Li, Z.-X., Tseng, H.-C., Lee, J.-Y., Chen, P.-H., Tsai, J.-H., Chen, P.-G., Lee, M. H.
Source: 2022 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2022 IEEE. :1-2 Jun, 2022
Relation: 2022 IEEE Silicon Nanoelectronics Workshop (SNW)
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10Conference
Authors: Lou, Z.-F., Liao, C.-Y., Hsiang, K.-Y., Lin, C.-Y., Lin, Y.-D., Yeh, P.-C., Wang, C.-Y., Yang, H.-Y., Tzeng, P.-J., Hou, T.-H., Tang, Y.-T., Lee, M. H.
Source: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022
Relation: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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11Conference
Authors: Liao, C.-Y., Lou, Z.-F., Lin, C.-Y., Senapati, A., Karmakar, R., Hsiang, K.-Y., Li, Z.-X., Ray, W.-C., Lee, J.-Y., Chen, P.-H., Chang, F.-S., Tseng, H.-H., Wang, C.-C., Tsai, J.-H., Tang, Y.-T., Chang, S. T., Liu, C. W., Maikap, S., Lee, M. H.
Source: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :36.6.1-36.6.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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12Conference
Authors: Hsiang, K.-Y., Chen, Y.-C., Chang, F.-S., Lin, C.-Y., Liao, C.-Y., Lou, Z.-F., Lee, J.-Y., Ray, W.-C., Li, Z.-X., Wang, C.-C., Tseng, H.-C., Chen, P.-H., Tsai, J.-H., Liao, M. H., Hou, T.-H., Liu, C. W., Huang, P.-T., Su, P., Lee, M. H.
Source: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :32.5.1-32.54 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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13Conference
Authors: Tang, Y.-T., Wu, T.-M., Fan, C.-L., Lai, Y.-M., Hsiang, K.-Y., Liao, C.-Y., Chang, S.-H., Yu, T.-Y., Su, P., Chang, M.-T., Huang, B.-H., Hu, C., Chang, S.-J., Chang, M.-F., Lee, M.-H.
Source: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Radio-Frequency Integration Technology (RFIT), 2021 IEEE International Symposium on. :1-2 Aug, 2021
Relation: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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14Conference
Authors: Hsiang, K.-Y., Liao, C.-Y., Lin, Y.-Y., Lou, Z.-F., Lin, C.-Y., Lee, J.-Y., Chang, F.-S., Li, Z.-X., Tseng, H.-C., Wang, C.-C., Ray, W.-C., Hou, T.-H., Chen, T.-C., Chang, C.-S., Lee, M. H.
Source: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P9-1-P9-4 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
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15Periodical
Authors: Hsiang, K.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Chen, Y.-C., Li, Z.-X., Liao, M. H., Liu, C. W., Hou, T.-H., Su, P., Lee, M. H.
Source: IEEE transactions on electron devices. 70(4):2142-2146
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16Periodical
Authors: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Lin, C.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Ray, W.-C., Li, Z.-X., Tseng, H.-C., Wang, C.-C., Liao, M. H., Hou, T.-H., Lee, M. H.
Source: IEEE electron device letters. 43(11):1850-1853
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17Periodical
Authors: Liao, C.-Y., Hsiang, K.-Y., Lin, C.-Y., Lou, Z.-F., Li, Z.-X., Tseng, H.-C., Chang, F.-S., Ray, W.-C., Wang, C.-C., Lee, J.-Y., Chen, P.-H., Tsai, J.-H., Liao, M.-H., Lee, M. H.
Source: IEEE electron device letters. 43(9):1559-1562
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18Periodical
Authors: Liao, C.-Y., Hsiang, K.-Y., Hsieh, F.-C., Chiang, S.-H., Chang, S.-H., Liu, J.-H., Lou, C.-F., Lin, C.-Y., Chen, T.-C., Chang, C.-S., Lee, M. H.
Source: IEEE electron device letters. 42(4):617-620
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19Periodical
Authors: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Wang, J.-F., Chiang, S.-H., Chang, S.-H., Hsieh, F.-C., Liang, H., Lin, C.-Y., Lou, Z.-F., Hou, T.-H., Liu, C. W., Lee, M. H.
Source: IEEE electron device letters. 42(10):1464-1467
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20Periodical
Authors: Lou, Z.-F., Liao, C.-Y., Hsiang, K.-Y., Li, Z.-H., Chang, S.-H., Chen, T.-C., Lee, M. H
Source: IEEE Transactions on Electron Devices; December 2024, Vol. 71 Issue: 12 p7437-7441, 5p