Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH)

Authors: Liu, C.-H., Hsiang, K.-Y., Chang, F.-S., Chang, Y.-T., Liu, C. W., Lee, M. H.

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Authors: Hsiang, K.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Li, Z.-X., Liu, C. W., Hou, T.-H., Su, P., Lee, M. H.

Source: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023

Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed

Authors: Tsai, Y. -T., Liu, C. -R., Chen, Y. -T., Wang, S. -M., Chen, Z. -K., Pai, C. -S., Haung, Z. -R., Chang, F. -S., Li, Z. -X., Hsiang, K. -Y., Lee, M. -H., Tang, Y. -T.

Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2307.04404

First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

Authors: Lee, S. -C., Chen, Y. -T., Liu, C. -R., Wang, S. -M., Tang, Y. -T., Chang, F. -S., Li, Z. -X., Hsiang, K. -Y., Lee, M. -H.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2307.01114

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

Authors: Lee, J.-Y., Chang, F.-S., Hsiang, K.-Y., Chen, P.-H., Luo, Z.-F., Li, Z.-X., Tsai, J.-H., Liu, C. W., Lee, M. H.

Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

Authors: Hsiang, K.-Y., Lee, J.-Y., Chang, F.-S., Lou, Z.-F., Li, Z.-X., Li, Z.-H., Chen, J.-H., Liu, C. W., Hou, T.-H., Lee, M. H.

Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Authors: Liao, C.-Y., Hsiang, K.-Y., Lou, Z. -F., Tseng, H.-C., Lin, C.-Y., Li, Z.-X., Hsieh, F.-C., Wang, C.-C., Chang, F.-S., Ray, W.-C., Tseng, Y.-Y., Chang, S. T., Chen, T.-C., Lee, M. H.

Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :1-2 Jun, 2022

Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

Authors: Chiang, H. -L., Wang, J.-F., Lin, K. -H., Nien, C.-H., Wu, J. -J., Hsiang, K.-Y., Chuu, C. -P., Chen, Y.-W., Zhang, X. W., Liu, C. W., Wang, Tahui, Wang, C. -C., Lee, M.-H., Chang, M. -F., Chang, C.-S., Chen, T. C.

Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :361-362 Jun, 2022

Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2 FET

Authors: Liao, C.-Y., Hsiang, K.-Y., Lou, Z.-F., Lin, C.-Y., Ray, W.-C., Chang, F.-S., Wang, C.-C., Li, Z.-X., Tseng, H.-C., Lee, J.-Y., Chen, P.-H., Tsai, J.-H., Chen, P.-G., Lee, M. H.

Source: 2022 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2022 IEEE. :1-2 Jun, 2022

Relation: 2022 IEEE Silicon Nanoelectronics Workshop (SNW)

Characterization of Double HfZrO2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Authors: Lou, Z.-F., Liao, C.-Y., Hsiang, K.-Y., Lin, C.-Y., Lin, Y.-D., Yeh, P.-C., Wang, C.-Y., Yang, H.-Y., Tzeng, P.-J., Hou, T.-H., Tang, Y.-T., Lee, M. H.

Source: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022

Relation: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

Authors: Liao, C.-Y., Lou, Z.-F., Lin, C.-Y., Senapati, A., Karmakar, R., Hsiang, K.-Y., Li, Z.-X., Ray, W.-C., Lee, J.-Y., Chen, P.-H., Chang, F.-S., Tseng, H.-H., Wang, C.-C., Tsai, J.-H., Tang, Y.-T., Chang, S. T., Liu, C. W., Maikap, S., Lee, M. H.

Source: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :36.6.1-36.6.4 Dec, 2022

Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

Authors: Hsiang, K.-Y., Chen, Y.-C., Chang, F.-S., Lin, C.-Y., Liao, C.-Y., Lou, Z.-F., Lee, J.-Y., Ray, W.-C., Li, Z.-X., Wang, C.-C., Tseng, H.-C., Chen, P.-H., Tsai, J.-H., Liao, M. H., Hou, T.-H., Liu, C. W., Huang, P.-T., Su, P., Lee, M. H.

Source: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :32.5.1-32.54 Dec, 2022

Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

Deep insights into Interface Effects to achieve Low-voltage Operation (

Authors: Tang, Y.-T., Wu, T.-M., Fan, C.-L., Lai, Y.-M., Hsiang, K.-Y., Liao, C.-Y., Chang, S.-H., Yu, T.-Y., Su, P., Chang, M.-T., Huang, B.-H., Hu, C., Chang, S.-J., Chang, M.-F., Lee, M.-H.

Source: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Radio-Frequency Integration Technology (RFIT), 2021 IEEE International Symposium on. :1-2 Aug, 2021

Relation: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2

Authors: Hsiang, K.-Y., Liao, C.-Y., Lin, Y.-Y., Lou, Z.-F., Lin, C.-Y., Lee, J.-Y., Chang, F.-S., Li, Z.-X., Tseng, H.-C., Wang, C.-C., Ray, W.-C., Hou, T.-H., Chen, T.-C., Chang, C.-S., Lee, M. H.

Source: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P9-1-P9-4 Mar, 2022

Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)

Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

Authors: Hsiang, K.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Chen, Y.-C., Li, Z.-X., Liao, M. H., Liu, C. W., Hou, T.-H., Su, P., Lee, M. H.

Source: IEEE transactions on electron devices. 70(4):2142-2146

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100178399052.0x000001&indx=1&recIds=ETOCvdc_100178399052.0x000001

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

Authors: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Lin, C.-Y., Lee, J.-Y., Lou, Z.-F., Chang, F.-S., Ray, W.-C., Li, Z.-X., Tseng, H.-C., Wang, C.-C., Liao, M. H., Hou, T.-H., Lee, M. H.

Source: IEEE electron device letters. 43(11):1850-1853

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100163253520.0x000001&indx=1&recIds=ETOCvdc_100163253520.0x000001

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂

Authors: Liao, C.-Y., Hsiang, K.-Y., Lin, C.-Y., Lou, Z.-F., Li, Z.-X., Tseng, H.-C., Chang, F.-S., Ray, W.-C., Wang, C.-C., Lee, J.-Y., Chen, P.-H., Tsai, J.-H., Liao, M.-H., Lee, M. H.

Source: IEEE electron device letters. 43(9):1559-1562

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100159430588.0x000001&indx=1&recIds=ETOCvdc_100159430588.0x000001

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

Authors: Liao, C.-Y., Hsiang, K.-Y., Hsieh, F.-C., Chiang, S.-H., Chang, S.-H., Liu, J.-H., Lou, C.-F., Lin, C.-Y., Chen, T.-C., Chang, C.-S., Lee, M. H.

Source: IEEE electron device letters. 42(4):617-620

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100117896477.0x000001&indx=1&recIds=ETOCvdc_100117896477.0x000001

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

Authors: Hsiang, K.-Y., Liao, C.-Y., Liu, J.-H., Wang, J.-F., Chiang, S.-H., Chang, S.-H., Hsieh, F.-C., Liang, H., Lin, C.-Y., Lou, Z.-F., Hou, T.-H., Liu, C. W., Lee, M. H.

Source: IEEE electron device letters. 42(10):1464-1467

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100131252291.0x000001&indx=1&recIds=ETOCvdc_100131252291.0x000001

Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Authors: Lou, Z.-F., Liao, C.-Y., Hsiang, K.-Y., Li, Z.-H., Chang, S.-H., Chen, T.-C., Lee, M. H

Source: IEEE Transactions on Electron Devices; December 2024, Vol. 71 Issue: 12 p7437-7441, 5p