High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Authors: Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy Jr., C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

Source: Applied Physics Letters 87(24):241103 - 241103-3, 2005

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/2009.01635

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

Authors: Mastro, M. A., Holm, R. T., Bassim, N. D., Gaskill, D. K., Culbertson, J. C., Fatemi, M., Eddy Jr., C. R., Henry, R. L., Twigg, M. E.

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 24(4), 2006

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/2009.01207

Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates

Authors: Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, Jr., C. R., Henry, R. L., Twigg, M. E., Rosenberg, A.

Source: Japanese Journal of Applied Physics 45(29-32), 2006

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/2009.01198

Array of Two UV-Wavelength Detector Types

Authors: Ngu, Y., Peckerar, M. C., Sander, D., Eddy, C. R., Mastro, M. A., Hite, J. K., Holm, R. T., Henry, R. L., Tuchman, A.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 57(6):1224-1229 Jun, 2010

Investigation of Three-Step Epilayer Growth Approach of GaN Films to Minimize Compensation.

Authors: Eddy, C. R. Jr, Holm, R. T., Henry, R. L.

Source: Journal of Electronic Materials; September 2005, Vol. 34 Issue 9, p1187-1192, 6p

Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy.

Authors: Zvanut, M. E., Matlock, D. M., Henry, R. L.

Source: Journal of Applied Physics; 2/15/2004, Vol. 95 Issue 4, p1884-1887, 4p

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN.

Authors: Kim, S., Henry, R. L., Wickenden, A. E.

Source: Journal of Applied Physics; July 1 2001, Vol. 90 Issue 1, p252-259, 8p

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys.

Authors: Wickenden, A. E., Koleske, D. D., Henry, R. L.

Source: Journal of Electronic Materials; January 2000, Vol. 29 Issue 1, p21-26, 6p

The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films.

Authors: Wickenden, A. E., Koleske, D. D., Henry, R. L.

Source: Journal of Electronic Materials; March 1999, Vol. 28 Issue 3, p301-307, 7p

Growth model for GaN with comparison to structural, optical, and electrical properties.

Authors: Koleske, D. D., Wickenden, A. E., Henry, R. L.

Source: Journal of Applied Physics; August 15 1998, Vol. 84 Issue 4, p1998-2010, 13p

'Totally in Love': Evidence of a Master Narrative for How New Mothers Should Feel About Their Babies

Authors: Kerrick, M. R., Henry, R. L.

Source: SEX ROLES. 76(1-2):1-16

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN381608565&indx=1&recIds=ETOCRN381608565

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
International Conference on Silicon Carbide and Related Materials

Authors: Bassim, N. D., Twigg, M. E., Mastro, M. A., Neudeck, P. G., Eddy, C. R., Henry, R. L., Holm, R. N., Powell, J. A., Trunek, A. J.

Source: MATERIALS SCIENCE FORUM. 527/529(2):1509-1512

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN061884062&indx=1&recIds=ETOCCN061884062

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
International Conference on Silicon Carbide and Related Materials

Authors: Eddy, C. R., Bassim, N. D., Mastro, M. A., Henry, R. L., Twigg, M. E., Holm, R. T., Culbertson, J. C., Neudeck, P. G., Powell, J. A., Trunek, A. J.

Source: MATERIALS SCIENCE FORUM. 527/529(2):1483-1488

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN061884000&indx=1&recIds=ETOCCN061884000

Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
AVS

Authors: Mastro, M. A., Holm, R. T., Bassim, N. D., Gaskill, D. K., Culbertson, J. C., Fatemi, M., Eddy, C. R., Henry, R. L., Twigg, M. E.

Source: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS. 24(4):1631-1634

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN060496881&indx=1&recIds=ETOCCN060496881

Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing
International conference on nitride semiconductors

Authors: Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., OKeefe, M., Hautakangas, S., Saarinen, K., Freitas, J. A., Henry, R. L.

Source: PHYSICA STATUS SOLIDI A APPLICATIONS AND MATERIALS SCIENCE. 203(NO 7):1636-1640

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN060055500&indx=1&recIds=ETOCCN060055500

Gallium and nitrogen vacancies in GaN: Impurity decoration effects
Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23

Authors: Hautakangas, S., Ranki, V., Makkonen, I., Puska, M. J., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P., Freitas, Jr, J. A., Henry, R. L.

Source: PHYSICA B. 376-377:424-427

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN059512934&indx=1&recIds=ETOCCN059512934

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient
Bulk nitride workshop: the international workshop on bulk nitride semiconductors III

Authors: Feigelson, B. N., Henry, R. L.

Source: JOURNAL OF CRYSTAL GROWTH. 281(NO 1):5-10

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN056182984&indx=1&recIds=ETOCCN056182984

Domain Organization in the 54-kDa Subunit of the Chloroplast Signal Recognition Particle

Authors: Henderson, R. C., Gao, F., Jayanthi, S., Kight, A., Sharma, P., Goforth, R. L., Heyes, C. D., Henry, R. L., Suresh Kumar, T. K.

Source: BIOPHYSICAL JOURNAL. 111(6):1151-1162

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN380917293&indx=1&recIds=ETOCRN380917293

A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth
GaN, A1N, InN and their alloys

Authors: Twigg, M. E., Bassim, N. D., Eddy, C. R., Henry, R. L., Holm, R. T., Mastro, M. A.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 831:677-684

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN057382282&indx=1&recIds=ETOCCN057382282

The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120) Sapphire Versus Pressure and Temperature
Symposium on GaN and Related Alloys; GaN and related alloys--2003: symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

Authors: Wojtowicz, T., Ruterana, P., Twigg, M. E., Henry, R. L., Koleske, D. D., Wickenden, A. E.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 798:771-774

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN052331910&indx=1&recIds=ETOCCN052331910