Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

Authors: Yin, Shan, Lin, Yiming, Hao, Ronghui, Jin, Shoudong, He, Chuan, Yao, Weigang, Li, Xingjun, He, Qingyuan, Pu, Xiaoqing, Su, Xiaoliang, Zou, Yanbo, Cai, Hui, Lee, Kye-Jin, Wang, Mike, Guo, Harry, Shen, Ke, Wang, Felix, Chiu, H.-C., Chen, Larry, Marcon, Denis, Wong, Roy K.-Y.

Source: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :93-96 May, 2022

Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Electronic interactions between neighboring functionalized guest Sb single atoms and Pt clusters enhance CO tolerance

Authors: Miao, Wenkang, Hao, Ronghui, Gan, Lu, Xu, Wanyin, Wang, Zihan, Lin, Wenxin, Liu, Heguang, Lyu, Yinchun, Li, Qianqian, Xi, Jinyang, Nie, Anmin, Wu, Jinsong, Wang, Hongtao

Source: In Journal of Energy Chemistry February 2025 101:733-743

Fabrication of regular UiO-66(Ce) nanocubes and their electrochemical catalysis performance

Authors: Yuan, Jingwei, Xu, Wanyin, Wang, Yirong, Wang, Shao, Hao, Ronghui, Dong, Yubing, Li, Qianqian, Zhao, Yufeng

Source: In Materials Science & Engineering B January 2025 311

MIL-53(Fe)-based catalysts: CO2 hydrogenation performance and three-dimensional structures

Authors: Gao, Tianhe, Yuan, Jingwei, Xu, Wanyin, Hao, Ronghui, Miao, Wenkang, Wang, Zihan, Dong, Yubing, Lin, Wenxin, Li, Qianqian

Source: In Materials Science & Engineering B December 2024 310

Unraveling the atomic structure evolution of titanium nitride upon oxidation

Authors: Hao, Ronghui, Miao, Wenkang, Xu, Wanyin, Lin, Yicheng, Xiao, Qiling, Wang, Zihan, Li, Qianqian, Wang, Peng, Wang, Tianzhong, Nie, Anmin, Wu, Jinsong, Wang, Hongtao

Source: In Corrosion Science November 2024 240

Exploiting Co-C interface and graphitic carbon belts for enhanced structural stability of a porous layered Co-C catalyst for CO2 hydrogenation

Authors: Chen, Jiaxing ^{a, 1}, Xu, Wanyin ^{b, 1}, Miao, Wenkang ^b, Hao, Ronghui ^b, Lin, Wenxin ^{a, ⁎}, Gao, Junkuo ^{a, ⁎}, Li, Qianqian ^{b, ⁎}

Source: In Chemical Engineering Journal 15 June 2024 490

An integrated economic-ecological index based on satellite-derived carbon sequestration and carbon price: A case study during 2015–2020 in Shaanxi, China

Authors: Liu, Ming, Hao, Ronghui, Han, Ling, Zhou, Gaoxiang, Li, Liangzhi

Source: In Ecological Indicators September 2023 153

Insights into size-dependent oxidation pathways in TiN: Atomic phase transformation and structural failure

Authors: Hao, Ronghui, Miao, Wenkang, Xiao, Qiling, Wang, Zihan, Xu, Wanyin, Wang, Tianzhong, Li, Qianqian, Wang, Peng, Nie, Anmin, Wang, Hongtao

Source: In Applied Surface Science 30 May 2023 620

Impact of N− plasma treatment on the Current collapse of ALGAN/GAN HEMTs

Authors: Dong, Zhihua, Hao, Ronghui, Zhang, Zhili, Cai, CYong, Zhang, Baoshun, Cheng, Zhiqun

Source: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014

Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Architecture Design and Catalytic Activity: Non‐Noble Bimetallic CoFe/fe3O4 Core–Shell Structures for CO2 Hydrogenation

Authors: Miao, Wenkang, Hao, Ronghui, Wang, Jingzhou, Wang, Zihan, Lin, Wenxin, Liu, Heguang, Feng, Zhenjie, Lyu, Yingchun, Li, Qianqian, Jia, Dongling, Ouyang, Runhai, Cheng, Jipeng, Nie, Anmin, Wu, Jinsong

Source: Advanced science. 10(5)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100175725408.0x000001&indx=1&recIds=ETOCvdc_100175725408.0x000001

Phase Transformation Pathways of Titanium Nitride in Oxidation Process: Investigated by Environmental Scanning/Transmission Electron Microscopy.

Authors: Li, Qianqian, Hao, Ronghui, Miao, Wenkang, Xu, Wanyin

Source: Microscopy & Microanalysis; 2024 Supplement, Vol. 30, p1-3, 3p

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Authors: Chen, Fu, Hao, Ronghui, Yu, Guohao, Zhang, Xiaodong, Song, Liang, Wang, Jinyan, Cai, Yong, Zhang, Baoshun

Source: Applied physics letters. 115(11)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090742126.0x000001&indx=1&recIds=ETOCvdc_100090742126.0x000001

Architecture Design and Catalytic Activity: Non‐Noble Bimetallic CoFe/fe3O4 Core–Shell Structures for CO2 Hydrogenation.

Authors: Miao, Wenkang¹ (AUTHOR), Hao, Ronghui¹ (AUTHOR), Wang, Jingzhou¹ (AUTHOR), Wang, Zihan¹ (AUTHOR), Lin, Wenxin² (AUTHOR), Liu, Heguang³ (AUTHOR), Feng, Zhenjie¹ (AUTHOR), Lyu, Yingchun¹ (AUTHOR), Li, Qianqian¹ (AUTHOR) qianqianli@shu.edu.cn, Jia, Dongling⁴ (AUTHOR) jiadl@sumhs.edu.cn, Ouyang, Runhai¹ (AUTHOR) rouyang@shu.edu.cn, Cheng, Jipeng⁵ (AUTHOR), Nie, Anmin⁶ (AUTHOR), Wu, Jinsong⁷ (AUTHOR)

Source: Advanced Science. 2/14/2023, Vol. 10 Issue 5, p1-12. 12p.

Subject Terms: *BIMETALLIC catalysts, *WATER gas shift reactions, *CATALYTIC activity, *ARCHITECTURAL design, *METAL catalysts, *HYDROGENATION, *CATALYST structure

Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress

Authors: Song, Liang, Fu, Kai, Zhao, Jie, Yu, Guohao, Hao, Ronghui, Fan, Yaming, Cai, Yong, Zhang, Baoshun

Source: Journal of vacuum science and technology.B.Nanotechnology & microelectronics. 36(4)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090382206.0x000001&indx=1&recIds=ETOCvdc_100090382206.0x000001

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Authors: Xu, Ning, Hao, Ronghui, Chen, Fu, Zhang, Xiaodong, Zhang, Hui, Zhang, Peipei, Ding, Xiaoyu, Song, Liang, Yu, Guohao, Cheng, Kai, Cai, Yong, Zhang, Baoshun

Source: Applied physics letters. 113(15)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090273798.0x000001&indx=1&recIds=ETOCvdc_100090273798.0x000001

Improving the Cycling Stability of LiNi0.8Co0.1Mn0.1O2 by Enhancing the Structural Integrity via Synchronous Li2SiO3 Coating.

Authors: Qiao, Yide, Hao, Ronghui, Shi, Xiaowei, Li, Yingbo, Wang, Yaling, Zhang, Yan, Tang, Cheng, Li, Guohong, Wang, Guolong, Liu, Jiamei, Liu, Heguang, Chen, Yuanzhen, Li, Qianqian, Li, Lei

Source: ACS Applied Energy Materials; 4/25/2022, Vol. 5 Issue 4, p4885-4892, 8p

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Authors: Hao, Ronghui, Fu, Kai, Yu, Guohao, Li, Weiyi, Yuan, Jie, Song, Liang, Zhang, Zhili, Sun, Shichuang, Li, Xiajun, Cai, Yong, Zhang, Xinping, Zhang, Baoshun

Source: Applied physics letters. 109(15)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150937132.0x000001&indx=1&recIds=ETOCvdc_100150937132.0x000001

10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current

Authors: Hao, Ronghui, Wu, Dongdong, Fu, Kai, Song, Liang, Chen, Fu, Zhao, Jie, Du, Zhongkai, Zhang, Bingliang, Wang, Qilong, Yu, Guohao, Cheng, Kai, Cai, Yong, Zhang, Xinping, Zhang, Baoshun

Source: Electronics letters. 54(13):848-849

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100113401958.0x000001&indx=1&recIds=ETOCvdc_100113401958.0x000001

Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application.

Authors: Wong, Roy K-Y (AUTHOR), Hao, Ronghui (AUTHOR), Chou, Allen (AUTHOR), Zou, Y B (AUTHOR), Shen, J Y (AUTHOR), Li, Sichao (AUTHOR), Yang, C (AUTHOR) kingyuen@innoscience.com, Hu, Tiger (AUTHOR), Chen, F (AUTHOR), Zhang, J H (AUTHOR), Zhang, Ray (AUTHOR), Cao, Kenny (AUTHOR), Chen, L L (AUTHOR), Zhao, Thomas (AUTHOR), He, Simon (AUTHOR), Lee, Seiya (AUTHOR), Zhang, Martin (AUTHOR), Wu, Marco (AUTHOR), Lee, John (AUTHOR), Chen, P W (AUTHOR)

Source: Semiconductor Science & Technology. Jun2021, Vol. 36 Issue 6, p1-13. 13p.

Subject Terms: *MASS production, *EPITAXY, *METAL oxide semiconductor field-effect transistors, *RELIABILITY in engineering, *MODULATION-doped field-effect transistors, *ELECTROMAGNETIC interference, *ACCELERATED life testing

Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V~t~h stability

Authors: Shen, Feiyu, Hao, Ronghui, Song, Liang, Chen, Fu, Yu, Guohao, Zhang, Xiaodong, Fan, Yaming, Lin, Fujiang, Cai, Yong, Zhang, Baoshun

Source: Applied physics express. 12(6):066501-066501

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN620646603&indx=1&recIds=ETOCRN620646603