Self-Aligned in 2Pitch Cell Array Transistor (S2CAT) for 4F2 Based DRAM Generation Extension

Authors: Park, Seokhan, Oh, Gyuhwan, Yoo, Bowon, Jeong, Moonyoung, Lee, Kiseok, Lee, Sangho, Hong, Seongbin, Sung, Sang Hyun, Choi, Hyungeun, Jo, Taegeun, Jang, Wonchul, Park, Jaekyun, Park, Sangwuk, Yun, Hyunchul, Kim, Jinbum, Jang, Sunghwan, Kuh, Bong-Jin, Kim, Ilgweon, Oh, Jeonghoon, Han, Jin-Woo, Park, Jemin

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

Radiation-Hardened Processing-In-Memory Crossbar Array With Hybrid Synapse Devices for Space Application

Authors: Kang, Shin-Uk, Han, Jin-Woo, Choo, Min-Seong

Source: 2023 International Conference on Electronics, Information, and Communication (ICEIC) Electronics, Information, and Communication (ICEIC), 2023 International Conference on. :1-4 Feb, 2023

Relation: 2023 International Conference on Electronics, Information, and Communication (ICEIC)

Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell

Authors: Dutta, Tapas, Adamu-Lema, Fikru, Nagy, Daniel, Asenov, Asen, Nebesnyi, Valerii, Han, Jin-Woo, Widjaja, Yuniarto

Source: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :285-288 Sep, 2021

Relation: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Single Event Hard Error due to Terrestrial Radiation

Authors: Han, Jin-Woo, Meyyappan, M., Kim, Jungsik

Source: 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-6 Mar, 2021

Relation: 2021 IEEE International Reliability Physics Symposium (IRPS)

Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

Authors: Trang Dang, Le Dinh, Dinh Linh, Trinh, Dat, Ngyuen Thanh, Min, Changhong, Kim, Jinsang, Chang, Ik-Joon, Han, Jin-woo

Source: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020

Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)

Silicon pillars decorated with SWCNT-COOH for gas sensors

Authors: Kim, Hyeongyu, Kim, Kihyun, Kim, Beomseok, Han, Jin-woo, Meyyappan, M.

Source: In Sensors and Actuators: B. Chemical 1 November 2024 418

Experimental investigation of moisture penetration in adhesive layers under varying bonding conditions using near-infrared spectroscopy

Authors: Han, Jin-Woo, Sekiguchi, Yu, Shimamoto, Kazumasa, Akiyama, Haruhisa, Sato, Chiaki

Source: In International Journal of Adhesion and Adhesives September 2024 134

Study of Layout Dependent Radiation Hardness of FinFET SRAM using Full Domain 3D TCAD Simulation

Authors: Huynh, Khoa, Saltin, Johan, Han, Jin-Woo, Meyyappan, Meyya, Wong, Hiu Yung

Source: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019 IEEE. :1-3 Oct, 2019

Relation: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

Authors: Lee, Gyeongyeop, Suh, Minki, Ryu, Minsang, Lee, Yunjong, Han, Jin-Woo, Kim, Jungsik

Source: IEEE access. 11:97456-97465

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100192785794.0x000001&indx=1&recIds=ETOCvdc_100192785794.0x000001

Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation

Authors: Han, Jin-Woo, Suh, Minki, Lee, Gyeongyeop, Kim, Jungsik

Source: IEEE access. 11:82738-82743

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100191451778.0x000001&indx=1&recIds=ETOCvdc_100191451778.0x000001

Vacuum Field Emission Transistor in Nanometer Era

Authors: Han, Jin-Woo

Source: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2021 28th International Workshop on. :48-48 Jun, 2021

Relation: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

A CMOS-compatible boosted transistor having >2× drive current and low leakage current

Authors: Han, Jin-Woo, Moroz, Victor, Kucherov, Andrey, Maheshwari, Dinesh, Abramzon, Valentin, Or-Bach, Zvi, Nishi, Yoshio, Widjaja, Yuniarto

Source: 2016 46th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2016 46th European. :214-217 Sep, 2016

Relation: ESSDERC 2016 - 46th European Solid-State Device Research Conference

Impact of profile angle of CAD-CAM abutment on the marginal bone loss of implant-supported single-tooth posterior restorations

Authors: Han, Jin-Won, Han, Jin-Woo, Pyo, Se-Wook, Kim, Sunjai

Source: In The Journal of Prosthetic Dentistry

Nanoscale vacuum channel transistor

Authors: Han, Jin-Woo, Meyyappan, M.

Source: 14th IEEE International Conference on Nanotechnology Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on. :172-175 Aug, 2014

Relation: 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ~ 1V Wide Dynamic Voltage Scaling for Space Applications

Authors: Trang Dang, Le Dinh, Seo, Dongkyu, Han, Jin-Woo, Kim, Jinsang, Chang, Ik-Joon

Source: 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC) Solid-State Circuits Conference (A-SSCC), 2018 IEEE Asian. :133-134 Nov, 2018

Relation: 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)

In-Memory Hamming Error-Correcting Code in Memristor Crossbar

Authors: Bae, Woorham, Han, Jin-Woo, Yoon, Kyung Jean

Source: IEEE transactions on electron devices. 69(7):3700-3707

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100168250180.0x000001&indx=1&recIds=ETOCvdc_100168250180.0x000001

Single-Event Upset in 3-D Charge-Trap NAND Flash Memories

Authors: Park, Jounghun, Han, Jin-Woo, Yoon, Gilsang, Go, Donghyun, Kim, Donghwi, Kim, Jungsik, Lee, Jeong-Soo

Source: IEEE transactions on electron devices. 69(11):6089-6094

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100163170890.0x000001&indx=1&recIds=ETOCvdc_100163170890.0x000001

Energy- and Area-Efficient CMOS Synapse and Neuron for Spiking Neural Networks With STDP Learning

Authors: Joo, Bomin, Han, Jin-Woo, Kong, Bai-Sun

Source: IEEE transactions on circuits and systems.I.Regular papers. 69(9):3632-3642

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100159576066.0x000001&indx=1&recIds=ETOCvdc_100159576066.0x000001

Synthesis of multifunctionalized allyl isothiocyanates via isomerization of Morita-Baylis-Hillman adduct-derived allylic thiocyanates.

Authors: Shin, Sang Gyu, Oh, Hyun-Woo, Kim, Byung Chang, Ok, Jaeseung, Lee, Seung In, Youn, Sung Pyo, Bae, Hyun Hee, Park, Ji Yoon, Han, Jin Woo, Lee, Chang Hoon

Source: Synthetic Communications; 2025, Vol. 55 Issue 3, p251-258, 8p

Subject Terms: BRASSICACEAE, ISOMERIZATION, ISOTHIOCYANATES, THIOCYANATES, ATOMS

A Bi-stable 1- /2-Transistor SRAM in 14 nm FinFET Technology for High Density / High Performance Embedded Applications

Authors: Widjaja, Yuniarto, Wilson, James, Nguyen, Tu, Han, Jin-Woo, Norwood, Christopher, Maheshwari, Dinesh, Lai, Stefan, Vorenkamp, Pieter, Or-Bach, Zvi, Nishi, Yoshio

Source: 2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :18.6.1-18.6.4 Dec, 2018

Relation: 2018 IEEE International Electron Devices Meeting (IEDM)