Trigate 6T SRAM scaling to 0.06 µm2

Authors: Guillorna, M., Chang, J., Pyzyna, A., Engelmann, S., Joseph, E., Fletcher, B., Cabral, C., Lin, C.-H., Bryant, A., Darnon, M., Ott, J., Lavoie, C., Frank, M., Gignac, L., Newbury, J., Wang, C., Klaus, D., Kratschmer, E., Bucchignano, J., To, B., Graham, W., Lauer, I., Sikorski, E., Carter, S., Narayanan, V., Fuller, N., Zhang, Y., Haensch, W.

Source: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-3 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)