Novel 4F2 Multi-Bit Dual-Gate 2T0C for High-Density DRAM with Improved Vertical-Channel IGZO TFTs by Self-Aligned Single-Step Process

Authors: Liao, Fuxi, Zhu, Zhengyong, Chen, Kaifei, Yang, Guanhua, Liu, Menggan, Lu, Wendong, Wu, Zijing, Niu, Jiebin, Lu, Congyan, Kang, Bok-Moon, Shi, Jinghong, Wu, Xie-Shuai, Yu, Runsen, Zhang, Weidong, Zhang, Jing, Wang, Gui-Lei, Yue, Jinshan, Wang, Jiawei, Wang, Lingfei, Geng, Di, Lu, Nianduan, Zhao, Chao, Nathan, Arokia, Li, Ling, Liu, Ming

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Gas sensing performance of In2O3 nanostructures: A mini review

Authors: Shulin Yang, Huan Yin, Zhao Wang, Gui Lei, Huoxi Xu, Zhigao Lan, Haoshuang Gu

Source: Frontiers in Chemistry, Vol 11 (2023)

Subject Terms: In2O3, nanostructrues, gas sensor, sensing mechanism, review, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/fchem.2023.1174207/full; https://doaj.org/toc/2296-2646

Access URL: https://doaj.org/article/fd8ebd667ff84d7c8b369f1d417707b7

Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell VTH Compensation and ΔVSN/ΔVDATA Boosting Technique

Authors: Chen, Kaifei, Zhu, Zhengyong, Lu, Wendong, Liu, Menggan, Liao, Fuxi, Wu, Zijing, Niu, Jiebin, Kang, Bok-Moon, Dan, Wang, Wu, Xie-Shuai, Liu, Ming-Xu, Yu, Yong, Yang, Nan, Wang, Gui-Lei, Cao, Kan-Yu, Wang, Lingfei, Geng, Di, Lu, Nianduan, Yang, Guanhua, Zhao, Chao, Nathan, Arokia, Li, Ling, Liu, Ming

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

Nonreciprocal Superradiant Phase Transitions and Multicriticality in a Cavity QED System

Authors: Zhu, Gui-Lei, Hu, Chang-Sheng, Wang, Hui, Qin, Wei, Lü, Xin-You, Nori, Franco

Source: Phys. Rev. Lett. 132, 193602 (2024)

Subject Terms: Quantum Physics

Access URL: http://arxiv.org/abs/2405.13623

Gate-defined quantum point contacts in a germanium quantum well

Authors: Gao, Han, Kong, Zhen-Zhen, Zhang, Po, Luo, Yi, Su, Haitian, Liu, Xiao-Fei, Wang, Gui-Lei, Wang, Ji-Yin, Xu, H. Q.

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2405.03107

Cell Structure and Process Integration of a Novel 2T0C Technology for High-Density Dram Application

Authors: Zhu, Zheng-Yong, Kang, Bok-Moon, Zhang, Jing, Duan, Xin-Lv, Xiang, Jin-Juan, Yang, Guan-Hua, Geng, Di, Dan, Wang, Wu, Xie-Shuai, Liu, Ming-Xu, Wang, Gui-Lei, Zhao, Chao

Source: 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-4 Jun, 2023

Relation: 2023 China Semiconductor Technology International Conference (CSTIC)

A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation

Authors: Huang, Meng, Si, Shufang, He, Zheng, Zhou, Ying, Li, Sijia, Wang, Hong, Liu, Jinying, Xie, Dongsheng, Yang, Mengmeng, You, Kang, Choi, Chris, Tang, Yi, Li, Xiaojie, Qian, Shibing, Yang, Xiaodong, Hou, Long, Bai, Weiping, Liu, Zhongming, Tang, Yanzhe, Wu, Qiong, Wang, Yanqin, Dou, Tao, Kim, Jake, Wang, Gui-Lei, Baisp, Jie, Takao, Adachi, Zhao, Chao, Yoo, Abraham

Source: 2023 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2023 IEEE International. :1-4 May, 2023

Relation: 2023 IEEE International Memory Workshop (IMW)

A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

Authors: Ni, Ming, Ma, Rong-Long, Kong, Zhen-Zhen, Chu, Ning, Zhu, Sheng-Kai, Wang, Chu, Li, Ao-Ran, Liao, Wei-Zhu, Cao, Gang, Wang, Gui-Lei, Guo, Guang-Can, Hu, Xuedong, Li, Hai-Ou, Guo, Guo-Ping

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2404.18689

Metal Oxide Based Heterojunctions for Gas Sensors: A Review

Authors: Shulin Yang, Gui Lei, Huoxi Xu, Zhigao Lan, Zhao Wang, Haoshuang Gu

Source: Nanomaterials, Vol 11, Iss 4, p 1026 (2021)

Subject Terms: metal oxide, heterojunctions, gas sensor, sensing mechanism, review, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/11/4/1026; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/71a34035d53e49aeb5e16cda6ed5a2a2

A First-Principles Study on Hydrogen Sensing Properties of Pristine and Mo-Doped Graphene

Authors: Shulin Yang, Zhigao Lan, Huoxi Xu, Gui Lei, Wei Xie, Qibin Gu

Source: Journal of Nanotechnology, Vol 2018 (2018)

Subject Terms: Technology (General), T1-995

File Description: electronic resource

Relation: https://doaj.org/toc/1687-9503; https://doaj.org/toc/1687-9511

Access URL: https://doaj.org/article/556855a590a04f3c9f7f2b7b572bdcfa

Coupling of hole double quantum dot in planar germanium to a microwave cavity

Authors: Kang, Yuan, Li, Zong-Hu, Kong, Zhen-Zhen, Li, Fang-Ge, Hao, Tian-Yue, Wei, Ze-Cheng, Deng, Song-Yan, Wang, Bao-Chuan, Li, Hai-Ou, Wang, Gui-Lei, Guo, Guang-Can, Cao, Gang, Guo, Guo-Ping

Source: Phys. Rev. Applied 22, 024054 (2024)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/2310.08145

A SWAP Gate for Spin Qubits in Silicon

Authors: Ni, Ming, Ma, Rong-Long, Kong, Zhen-Zhen, Xue, Xiao, Zhu, Sheng-Kai, Wang, Chu, Li, Ao-Ran, Chu, Ning, Liao, Wei-Zhu, Cao, Gang, Wang, Gui-Lei, Guo, Guang-Can, Hu, Xuedong, Jiang, Hong-Wen, Li, Hai-Ou, Guo, Guo-Ping

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2310.06700

Single spin qubit geometric gate in a silicon quantum dot

Authors: Ma, Rong-Long, Li, Ao-Ran, Wang, Chu, Kong, Zhen-Zhen, Liao, Wei-Zhu, Ni, Ming, Zhu, Sheng-Kai, Chu, Ning, Zhang, Cheng-Xian, Liu, Di, Cao, Gang, Wang, Gui-Lei, Li, Hai-Ou, Guo, Guo-Ping

Source: Phys. Rev. Applied 21, 014044 (2024)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2310.06569

Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots

Authors: Ma, Rong-Long, Zhu, Sheng-Kai, Kong, Zhen-Zhen, Sun, Tai-Ping, Ni, Ming, Zhou, Yu-Chen, Zhou, Yuan, Luo, Gang, Cao, Gang, Wang, Gui-Lei, Li, Hai-Ou, Guo, Guo-Ping

Source: Phys. Rev. Applied 21, 034022 (2024)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2309.09723

Correcting on-chip distortion of control pulses with silicon spin qubits

Authors: Ni, Ming, Ma, Rong-Long, Kong, Zhen-Zhen, Chu, Ning, Liao, Wei-Zhu, Zhu, Sheng-Kai, Wang, Chu, Luo, Gang, Liu, Di, Cao, Gang, Wang, Gui-Lei, Li, Hai-Ou, Guo, Guo-Ping

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2309.09628

Transforming an azaarene into the spine of fusedbicyclics via cycloaddition-induced scaffold hopping of 5-Hydroxypyrazoles

Authors: You Zhou, Shuang-Gui Lei, Baihetiguli Abudureheman, Li-Sheng Wang, Zhi-Cheng Yu, Jia-Chen Xiang, An-Xin Wu

Source: Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/f8b6a2fcfb3447b594cafaed4b8912c8

TCAD Simulation Performance of VGAA for 4F2 High Density DRAM Cell

Authors: Wang, Wen-Qi, Liu, Xiang, Yu, Yong, Xiao, De-Yuan, Ba, Lan-Song, Liang, Hong-Gang, Liang, Jing, Jeon, Jong-Sung, Su, Xing-Song, Han, Qing-Hua, Zhu, Jing-Fei, Meng, Jing-Heng, Dai, Jin, Sun, Hong-Bo, Wang, Gui-Lei, Tang, Yan-Zhe, Li, Hong-Wen, Xu, Wei-Feng, Kang, Bryan, Yoo, Abraham, Cao, Kan-Yu, Zhao, Chao

Source: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022

Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Novel 2T DRAM by Storing Data in One Alternative Gate of a Double-Gate Transistor with a Low-leakage Oxide Transistor

Authors: Zhu, Zheng-Yong, Kang, Bok-Moon, Dan, Wang, Wu, Xie-Shuai, Son, Joohwan, Yu, Yong, Xiao, De-Yuan, Dai, Jin, Wang, Gui-Lei, Yoo, Abraham, Cao, Kan-Yu, Zhao, Chao

Source: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022

Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Using compact model to verify IGZO RO performance for engineering application

Authors: Yong, Yu, Liang, Jing, Yang, Nan, Xiao, De-Yuan, Jiang, Jian-Peng, Guo, Jing-Rui, Wang, Ling-Fei, Geng, Di, Ba, Lan-Song, Liang, Hong-Gang, Lu, Ya-Nan, Wang, Dan, Li, Yu-Ke, Yin, Xiao-Ming, Huang, Long, Shi, Jiang-Liu, Wang, Gui-Lei, Tang, Yan-Zhe, Li, Hong-Wen, Kang, Bryan, Yoo, Abraham, Cao, Kan-Yu, Li, Ling, Zhao, Chao

Source: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022

Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Investigation of Parasitic Capacitance Effects in V-GAA Transistor via 3D PEX Methodology

Authors: Liang, Hong-Gang, Yu, Yong, Xiao, De-Yuan, Zhu, Jing-Fei, Liang, Jing, Ba, Lan-Song, Leng, Ji-Bin, Zhu, Zheng-Yong, Li, Yong-Jie, Su, Xing-Song, Weng, Kobe, Bai, Li, Tang, Yan-Zhe, Sun, Hong-Bo, Wang, Gui-Lei, Li, Hong-Wen, Xu, Wei-Feng, Kang, Bryan, Yoo, Abraham, Cao, Kan-Yu, Zhao, Chao

Source: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022

Relation: 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)