Post Copper CMP Hybrid Clean Process for Advanced BEOL Technology

Authors: Tseng, W.-T., Devarapalli, V., Steffes, J., Ticknor, A., Khojasteh, M., Poloju, P., Goyette, C., Steber, D., Tai, L., Molis, S., Zaitz, M., Rill, E., Kennett, M., Economikos, L., Lustig, N., Bunke, C., Truong, C., Chudzik, M., Grunow, S.

Source: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 26(4):493-499 Nov, 2013

A 7nm CMOS technology platform for mobile and high performance compute application

Authors: Narasimha, S., Jagannathan, B., Ogino, A., Jaeger, D., Greene, B., Sheraw, C., Zhao, K., Haran, B., Kwon, U., Mahalingam, A. K. M., Kannan, B., Morganfeld, B., Dechene, J., Radens, C., Tessier, A., Hassan, A., Narisetty, H., Ahsan, I., Aminpur, M., An, C., Aquilino, M., Arya, A., Augur, R., Baliga, N., Bhelkar, R., Biery, G., Blauberg, A., Borjemscaia, N., Bryant, A., Cao, L., Chauhan, V., Chen, M., Cheng, L., Choo, J., Christiansen, C., Chu, T., Cohen, B., Coleman, R., Conklin, D., Crown, S., da Silva, A., Dechene, D., Derderian, G., Deshpande, S., Dilliway, G., Donegan, K., Eller, M., Fan, Y., Fang, Q., Gassaria, A., Gauthier, R., Ghosh, S., Gifford, G., Gordon, T., Gribelyuk, M., Han, G., Han, J.H., Han, K., Hasan, M., Higman, J., Holt, J., Hu, L., Huang, L., Huang, C., Hung, T., Jin, Y., Johnson, J., Johnson, S., Joshi, V., Joshi, M., Justison, P., Kalaga, S., Kim, T., Kim, W., Krishnan, R., Krishnan, B., Anil, K., Kumar, M., Lee, J., Lee, R., Lemon, J., Liew, S.L., Lindo, P., Lingalugari, M., Lipinski, M., Liu, P., Liu, J., Lucarini, S., Ma, W., Maciejewski, E., Madisetti, S., Malinowski, A., Mehta, J., Meng, C., Mitra, S., Montgomery, C., Nayfeh, H., Nigam, T., Northrop, G., Onishi, K., Ordonio, C., Ozbek, M., Pal, R., Parihar, S., Patterson, O., Ramanathan, E., Ramirez, I., Ranjan, R., Sarad, J., Sardesai, V., Saudari, S., Schiller, C., Senapati, B., Serrau, C., Shah, N., Shen, T., Sheng, H., Shepard, J., Shi, Y., Silvestre, M.C., Singh, D., Song, Z., Sporre, J., Srinivasan, P., Sun, Z., Sutton, A., Sweeney, R., Tabakman, K., Tan, M., Wang, X., Woodard, E., Xu, G., Xu, D., Xuan, T., Yan, Y., Yang, J., Yeap, K.B., Yu, M., Zainuddin, A., Zeng, J., Zhang, K., Zhao, M., Zhong, Y., Carter, R., Lin, C.-H., Grunow, S., Child, C., Lagus, M., Fox, R., Kaste, E., Gomba, G., Samavedam, S., Agnello, P., Sohn, D. K.

Source: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :29.5.1-29.5.4 Dec, 2017

Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH

Authors: McGahay, V., Bonilla, G., Chen, F., Christiansen, C., Cohen, S., Cullinan-Scholl, M., Demarest, J., Dunn, D., Engel, B., Fitzsimmons, J., Gill, J., Grunow, S., Herbst, B., Hichri, H., Ida, K., Klymko, N., Kiene, M., Labelle, C., Lee, T., Liniger, E., Liu, X.H., Madan, A., Malone, K., Martin, J., McLaughlin, P.V., Minami, M., Molis, S., Muzzy, C., Nguyen, S., Patel, J.C., Restaino, D., Sakamoto, A., Shaw, T.M., Shimooka, Y., Shobha, H., Simonyi, E., Widodo, J., Grill, A., Hannon, R., Lane, M., Nye, H., Spooner, T., Wisnieff, R., Ivers, T.

Source: 2006 International Interconnect Technology Conference Interconnect Technology Conference, 2006 International. :9-11 2006

Relation: 2006 International Interconnect Technology Conference

A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology

Authors: Sankaran, S., Arai, S., Augur, R., Beck, M., Biery, G., Bolom, T., Bonilla, G., Bravo, O., Chanda, K., Chae, M., Chen, F., Clevenger, L., Cohen, S., Cowley, A., Davis, P., Demarest, J., Doyle, J., Dimitrakopoulos, C., Economikos, L., Edelstein, D., Farooq, M., Filippi, R., Fitzsimmons, J., Fuller, N., Gates, S. M., Greco, S. E., Grill, A., Grunow, S., Hannon, R., Ida, K., Jung, D., Kaltalioglu, E., Kelling, M., Ko, T., Kumar, K., Labelle, C., Landis, H., Lane, M.W., Landers, W., Lee, M., Li, W., Liniger, E., Liu, X., Lloyd, J. R., Liu, W., Lustig, N., Malone, K., Marokkey, S., Matusiewicz, G., McLaughlin, P. S., McLaughlin, P. V., Mehta, S., Melville, I., Miyata, K., Moon, B., Nitta, S., Nguyen, D., Nicholson, L., Nielsen, D., Ong, P., Patel, K., Patel, V., Park, W., Pellerin, J., Ponoth, S., Petrarca, K., Rath, D., Restaino, D., Rhee, S., Ryan, E.T., Shoba, H., Simon, A., Simonyi, E., Shaw, T.M., Spooner, T., Standaert, T., Sucharitaves, J., Tian, C., Wendt, H., Werking, J., Widodo, J., Wiggins, L., Wisnieff, R., Ivers, T.

Source: 2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006

Relation: 2006 International Electron Devices Meeting

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

Authors: Agnello, P., Ivers, T., Warm, C., Wise, R., Wachnik, R., Schepis, D., Sankaran, S., Norum, J., Luning, S., Li, Y., Khare, M., Grill, A., Edelstein, D., Chen, X., Brown, D., Augur, R., Wu, S., Yu, J., Wong, R.C., Werking, J., Wehella-Gamage, D., Vayshenker, A., Van Meer, H., Van Den Nieuwenhuizen, R., Tian, C., Tabakman, K., Sung, C.Y., Standaert, T., Simon, A., Sim, J., Sheraw, C., Restaino, D., Rausch, W., Pal, R., Prindle, C., Ouyang, X., Ouyang, C., Ontalus, V., Nummy, K., Nielsen, D., Nicholson, L., McKnight, A., Lustig, N., Liu, X., Lee, M.H., Lea, D., Larosa, G., Landers, W., Kim, B., Kelling, M., Jeng, S.-J., Holt, J., Hargrove, M., Grunow, S., Greco, S., Gates, S., Frye, A., Fisher, P., Domenicucci, A., Dimitrakopoulos, C., Costrini, G., Chou, A., Cheng, J., Butt, S., Black, L., Belyansky, M., Ahsan, I., Adam, T., Gabor, A., Wu, C.-H.J., Yang, D., Crouse, M., Robinson, C., Corliss, D., Fonseca, C., Johnson, J., Weybright, M., Waite, A., Nayfeh, H.M., Onishi, K., Narasimha, S.

Source: 2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006

Relation: 2006 International Electron Devices Meeting

An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS

Authors: Miao, X., Bao, R., Kwon, U., Wong, K., Rausch, W., Weng, W., Wachnik, R., Grunow, S., Narayanan, V., Li, X., Krishnan, S.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 36(4):384-386 Apr, 2015

Reducing Density-Induced CMP Non-Uniformity For Advanced Semiconductor Technology Nodes
Evolutions in planarization: equipment, materials, techniques and applications

Authors: Zhang, J., Tseng, W., Chen, T., Kim, B., Flaitz, P., Kleemier, W., Goldberg, C., Truong, C., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 1560:79-84

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN086755190&indx=1&recIds=ETOCCN086755190

AMCIS-1631-2012.R1. Automating Enterprise Architecture Documentation using an Enterprise Service Bus
Americas conference of information systems

Authors: Buschle, M., Ekstedt, M., Grunow, S., Hauder, M., Matthes, F., Roth, S.

Source: PROCEEDINGS OF THE AMERICAS CONFERENCE ON INFORMATION SYSTEMS. Conf 18^t^h:4213-4226

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN084251366&indx=1&recIds=ETOCCN084251366

Comparison of Electromigration in Cu Interconnects with ALD or PVD TaN Liners
Atomic layer deposition application

Authors: Hu, C., Gignac, L., Liniger, E., Grunow, S., Simon, A., Liew, S.

Source: ECS TRANSACTIONS. 3(15):139-146

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN065500703&indx=1&recIds=ETOCCN065500703

Effect of Dielectric Pore Size Distribution on Interfacial Adhesion of the Tantalum-Porous Dielectric Interface
Materials, technology and reliability for advanced interconnects

Authors: Saxena, R., Cho, W., Rodriguez, O., Gill, W. N., Plawsky, J. L., Tsui, T., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. . 863:79-84

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN058082604&indx=1&recIds=ETOCCN058082604

Impact of Pre-Barrier Sputter Etch in Porous MSQ-Based Cu Interconnects
Advanced metallization conference; AMC 2003

Authors: Grunow, S., Rao, S. S. P., Ajmera, S. K., Solomentsev, Y., Chen, L., Jin, C., Russell, N. M.

Source: ADVANCED METALLIZATION CONFERENCE IN. CONF 2003:525-530

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN058198904&indx=1&recIds=ETOCCN058198904

'Seedless' Electrochemical Deposition of Copper on Physical Vapor Deposition-W~2N Liner Materials for Ultra Large Scale Integration (ULSI) Devices
Materials and processes for submicron technology

Authors: Shaw, M. J., Grunow, S., Duquette, D. J.

Source: JOURNAL OF ELECTRONIC MATERIALS. 30(NO 12):1602-1608

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN042243577&indx=1&recIds=ETOCCN042243577

Study of Electrochemical Deposition of Copper and Microstructure Evolution in Fine Lines
Polycrystalline metal and magnetic thin films

Authors: Grunow, S., Diatezua, D., Seo, S.-C., Stoner, T., Kaloyeros, A. E.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 562:243-248

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN033379330&indx=1&recIds=ETOCCN033379330

Integration of PECVD Tungsten Nitride as a Barrier Layer for Copper Metallization
Advanced interconnects and contacts

Authors: Ivanova, A. R., Galewski, C. J., Sans, C. A., Seidel, T. E., Grunow, S., Kumar, K., Kaloyeros, A. E.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 564:321-326

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN033192502&indx=1&recIds=ETOCCN033192502

Influence of gelatin coatings on compressive strength of porous hydroxyapatite ceramics

Authors: Dressler, M., Dombrowski, F., Simon, U., Börnstein, J., Hodoroaba, V.D., Feigl, M., Grunow, S., Gildenhaar, R., Neumann, M.

Source: In Journal of the European Ceramic Society 2011 31(4):523-529

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects
Materials and Processes for Advanced Interconnects for Microelectronics

Authors: Simon, A.H., Bolom, T., Tang, T.J., Baker, B., Peters, C., Rhoads, B., Flaitz, P.L., Sankaran, S., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 1079:35-40

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN248591818&indx=1&recIds=ETOCRN248591818

Comparison of Electromigration in Cu Interconnects with Atomic-Layer- or Physical-Vapor-Deposited TaN Liners

Authors: Hu, C.-K., Gignac, L., Liniger, E., Grunow, S., Demarest, J. J., Redder, B., Simon, A., Liew, S. L.

Source: JOURNAL- ELECTROCHEMICAL SOCIETY. 154(9):H755-H758

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN214197739&indx=1&recIds=ETOCRN214197739

Using Sputter Deposition to Increase CO Tolerance in a Proton-Exchange Membrane Fuel Cell

Authors: Haug, A. T., White, R. E., Weidner, J. W., Huang, W., Shi, S., Rana, N., Grunow, S., Stoner, T. C., Kaloyeros, A. E.

Source: JOURNAL- ELECTROCHEMICAL SOCIETY. 149(7):A868-A872

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN116306920&indx=1&recIds=ETOCRN116306920

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects
Materials and processes for advanced interconnects for microelectronics

Authors: Simon, A.H., Bolom, T., Tang, T.J., Baker, B., Peters, C., Rhoads, B., Flaitz, P.L., Sankaran, S., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. . 1079 (2008):35-40

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Copper Resistivity in Electrodeposited Dual Damascene Interconnects - An Integrated Circuit Perspective
Electrochemical Society

Authors: Lustig, N., Baker-O Neal, B., Flaitz, P., Standaert, T., DeHaven, P., Simon, A., Ko, T., Grunow, S., Werking, J., Greco, S.

Source: MEETING ABSTRACTS- ELECTROCHEMICAL SOCIETY -ALL DIVISIONS CD-ROM EDITION-. (1):411-411

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN061418968&indx=1&recIds=ETOCCN061418968