In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

Authors: Gorsak, Cameron A., Bowman, Henry J., Gann, Katie R., Buontempo, Joshua T., Smith, Kathleen T., Tripathi, Pushpanshu, Steele, Jacob, Jena, Debdeep, Schlom, Darrell G., Xing, Huili Grace, Thompson, Michael O., Nair, Hari P.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2408.01574

Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy

Authors: Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2212.12096

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification.

Authors: Smith, Kathleen T.¹ (AUTHOR) kts57@cornell.edu, Gorsak, Cameron A.² (AUTHOR), Buontempo, Joshua T.² (AUTHOR), Cromer, Bennett J.² (AUTHOR), Ikenoue, Takumi³ (AUTHOR), Gulupalli, Hemant² (AUTHOR), Thompson, Michael O.² (AUTHOR), Jena, Debdeep^2,4,5 (AUTHOR), Nair, Hari P.² (AUTHOR), Xing, Huili Grace^2,4,5 (AUTHOR) grace.xing@cornell.edu

Source: Journal of Applied Physics. 12/7/2024, Vol. 136 Issue 21, p1-10. 10p.

Subject Terms: *METALWORK, *OHMIC contacts, *X-ray photoelectron spectroscopy, *PARTIAL oxidation, *OXIDATION-reduction reaction

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification.

Authors: Smith, Kathleen T.¹, kts57@cornell.edu, Gorsak, Cameron A.², Buontempo, Joshua T.², Cromer, Bennett J.², Ikenoue, Takumi³, Gulupalli, Hemant², Thompson, Michael O.², Jena, Debdeep^2,4,5, Nair, Hari P.², Xing, Huili Grace^2,4,5, grace.xing@cornell.edu

Source: Journal of Applied Physics; 12/7/2024, Vol. 136 Issue 21, p1-10, 10p

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Authors: Gann, Katie R.¹, krg66@cornell.edu, Pieczulewski, Naomi¹, Gorsak, Cameron A.¹, Heinselman, Karen², Asel, Thaddeus J.³, Noesges, Brenton A.^3,4, Smith, Kathleen T.⁵, Dryden, Daniel M.⁶, Xing, Huili Grace^1,7,8, Nair, Hari P.¹, Muller, David A.^5,8, Thompson, Michael O.¹

Source: Journal of Applied Physics; 1/7/2024, Vol. 135 Issue 1, p1-10, 10p

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Authors: Gann, Katie R., Pieczulewski, Naomi, Gorsak, Cameron A., Heinselman, Karen, Asel, Thaddeus J., Noesges, Brenton A., Smith, Kathleen T., Dryden, Daniel M., Xing, Huili Grace, Nair, Hari P., Muller, David A., Thompson, Michael O.

Source: Journal of Applied Physics; 1/7/2024, Vol. 135 Issue 1, p1-10, 10p

Subject Terms: SCANNING transmission electron microscopy, RUTHERFORD backscattering spectrometry, MOLECULAR beam epitaxy, LOW temperatures

In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system.

Authors: Gorsak, Cameron A.¹ (AUTHOR), Bowman, Henry J.² (AUTHOR), Gann, Katie R.¹ (AUTHOR), Buontempo, Joshua T.¹ (AUTHOR), Smith, Kathleen T.³ (AUTHOR), Tripathi, Pushpanshu¹ (AUTHOR), Steele, Jacob¹ (AUTHOR), Jena, Debdeep^1,4,5 (AUTHOR), Schlom, Darrell G.^1,5,6 (AUTHOR), Xing, Huili Grace^1,4,5 (AUTHOR), Thompson, Michael O.¹ (AUTHOR), Nair, Hari P.¹ (AUTHOR) hn277@cornell.edu

Source: Applied Physics Letters. 12/9/2024, Vol. 125 Issue 24, p1-6. 6p.

Subject Terms: *CHEMICAL vapor deposition, *BOUNDARY layer (Aerodynamics), *SUBSTRATES (Materials science), *SURFACE morphology, *ETCHING

In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system.

Authors: Gorsak, Cameron A.¹, Bowman, Henry J.², Gann, Katie R.¹, Buontempo, Joshua T.¹, Smith, Kathleen T.³, Tripathi, Pushpanshu¹, Steele, Jacob¹, Jena, Debdeep^1,4,5, Schlom, Darrell G.^1,5,6, Xing, Huili Grace^1,4,5, Thompson, Michael O.¹, Nair, Hari P.¹, hn277@cornell.edu

Source: Applied Physics Letters; 12/9/2024, Vol. 125 Issue 24, p1-6, 6p

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Authors: Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

Source: APL materials. 11(4)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100180709917.0x000001&indx=1&recIds=ETOCvdc_100180709917.0x000001

Non-alloyed ohmic contacts to (010) β-Ga2O3 with low contact resistance.

Authors: Smith, Kathleen T.¹ (AUTHOR) kts57@cornell.edu, Gorsak, Cameron A.² (AUTHOR), Kalra, Avijit³ (AUTHOR), Cromer, Bennett J.² (AUTHOR), Azizie, Kathy² (AUTHOR), Dryden, Daniel M.⁴ (AUTHOR), Schlom, Darrell G.^2,5 (AUTHOR), Jena, Debdeep^2,5,6 (AUTHOR), Nair, Hari P.² (AUTHOR), Xing, Huili Grace^2,5,6 (AUTHOR)

Source: Applied Physics Letters. 12/11/2023, Vol. 123 Issue 24, p1-7. 7p.

Subject Terms: *OHMIC contacts, *MOLECULAR beam epitaxy, *X-ray photoelectron spectroscopy, *CHEMICAL vapor deposition, *GALLIUM alloys, *OHMIC resistance

Non-alloyed ohmic contacts to (010) β-Ga2O3 with low contact resistance.

Authors: Smith, Kathleen T.¹, kts57@cornell.edu, Gorsak, Cameron A.², Kalra, Avijit³, Cromer, Bennett J.², Azizie, Kathy², Dryden, Daniel M.⁴, Schlom, Darrell G.^2,5, Jena, Debdeep^2,5,6, Nair, Hari P.², Xing, Huili Grace^2,5,6

Source: Applied Physics Letters; 12/11/2023, Vol. 123 Issue 24, p1-7, 7p

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Authors: Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

Source: Physica status solidi.A.Applications and materials science. 217(7)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100107717527.0x000001&indx=1&recIds=ETOCvdc_100107717527.0x000001

Polarity dependent implanted p-type dopant activation in GaN

Authors: Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

Source: Japanese journal of applied physics. 58(C):SCCD07-SCCD07

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN620667801&indx=1&recIds=ETOCRN620667801

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy.

Authors: Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson

Source: APL Materials; Apr2023, Vol. 11 Issue 4, p1-12, 12p

Subject Terms: EPITAXY, HALL effect, THICK films, MOLECULAR beams, CARRIER density, METAL oxide semiconductor field-effect transistors

In situ annealing of III1-xMnxV ferromagnetic semiconductors

Authors: Liu, Xinyu, Bac, Seul-Ki, Sapkota, Pitambar, Gorsak, Cameron, Li, Xiang, Dong, Sining, Lee, Sanghoon, Ptasinska, Sylwia, Furdyna, Jacek K., Dobrowolska, Margaret

Source: Journal of vacuum science and technology.B.Nanotechnology & microelectronics. 36(2)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090223361.0x000001&indx=1&recIds=ETOCvdc_100090223361.0x000001

Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

Authors: Li, Xiang, Liu, Xinyu, Dong, Sining, Gorsak, Cameron, Furdyna, Jacek K., Dobrowolska, Margaret, Bac, Seul-Ki, Lee, Sanghoon, Rouvimov, Sergei

Source: Journal of vacuum science and technology.B.Nanotechnology & microelectronics. 36(2)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090223351.0x000001&indx=1&recIds=ETOCvdc_100090223351.0x000001

Mercury-probe measurement of electron mobility in β-Ga2O3using junction moderated dielectric relaxation

Authors: Li, Jian V., Kim, Yunjo, Charnas, Adam R., Noesges, Brenton A., Evans, Prescott E., Asel, Thaddeus J., Neal, Adam T., Gorsak, Cameron A., Nair, Hari P., Mou, Shin

Source: Japanese Journal of Applied Physics; October 2024, Vol. 63 Issue: 10 p101002-101002, 1p

Impacts of device processing on contact interfaces to (010) β-Ga2O3

Authors: Rogers, David J., Teherani, Ferechteh H., Smith, Kathleen T., Gorsak, Cameron A., Kalra, Avijit, Cromer, Bennett J., Jena, Debdeep, Nair, Hari P., Xing, Huili G.

Source: Proceedings of SPIE; March 2024, Vol. 12887 Issue: 1 p1288706-1288706-9

In situ annealing of III1-xMnxV ferromagnetic semiconductors.

Authors: Gorsak, Cameron, Li, Xiang, Dong, Sining, Ptasinska, Sylwia, Furdyna, Jacek K., Dobrowolska, Margaret, Liu, Xinyu¹, Bac, Seul-Ki², Sapkota, Pitambar³, Lee, Sanghoon⁴

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar/Apr2018, Vol. 36 Issue 2, p1-1, 1p

Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy.

Authors: Li, Xiang¹, Liu, Xinyu¹, Dong, Sining¹, Gorsak, Cameron¹, Furdyna, Jacek K.¹, Dobrowolska, Margaret¹, Bac, Seul-Ki², Lee, Sanghoon², Rouvimov, Sergei³

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar/Apr2018, Vol. 36 Issue 2, p1-1, 1p