Experimental analysis of variability in WS$_2$-based devices for hardware security

Authors: Vatalaro, M., Neill, H., Gity, F., Magnone, P., Maccaronio, V., Márquez, C., Galdon, J. C., Gamiz, F., Crupi, F., Hurley, P., De Rose, R.

Source: Solid-State Electronics 2023

Subject Terms: Computer Science - Emerging Technologies

Access URL: http://arxiv.org/abs/2308.02265

CVD-grown back-gated MoS2 transistors

Authors: Marquez, C., Salazar, N., Gity, F., Navarro, C., Mirabelli, G., Duffy, R., Galdon, J., Navarro, S., Hurley, P.K., Gamiz, F.

Source: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2020 Joint International EUROSOI Workshop and International Conference on. :1-4 Sep, 2020

Relation: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Relationship between capacitance and conductance in MOS capacitors

Authors: Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L., Hurley, P. K.

Source: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2019 International Conference on. :1-4 Sep, 2019

Relation: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems

Authors: Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Gity, F., Palestri, P., Esseni, D., Selmi, L., Hurley, P.K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(10):4372-4378 Oct, 2020

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks

Authors: Caruso, E., Lin, J., Burke, K. F., Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestri, P., Hurley, P., Selmi, L.

Source: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2018 Joint International EUROSOI Workshop and International Conference on. :1-4 Mar, 2018

Relation: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

Authors: Ben Ali, K., Gammon, P. M., Chan, C. W., Li, F., Pathirana, V., Trajkovic, T., Gity, F., Flandre, D., Kilchytska, V.

Source: 2017 47th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2017 47th European. :236-239 Sep, 2017

Relation: ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)

Numerical simulations with energy balance model for unitraveling-carrier photodiode

Authors: Gardes, C., Justice, J., Gity, F., Yang, H., Corbett, B.

Source: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on. :350-353 Jul, 2015

Relation: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

Authors: Shayesteh, M., O'Connell, D., Gity, F., Murphy-Armando, F., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H. H., Petersen, D. H., Nielsen, P. F., Duffy, R.

Source: 2014 20th International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2014 20th International Conference on. :1-4 Jun, 2014

Relation: 2014 20th International Conference on Ion Implantation Technology (IIT)

Photoconductive Solution Processed ZnO Quasi-superlattice Films
Thin film transistors (Symposium)

Authors: Buckley, D., Inguva, S., McNulty, D., Zubialevich, V. Z., Parbrook, P., Gity, F., Hurley, P. K., O Dwyer, C.

Source: ECS transactions. 98(7):151-160

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN606442712&indx=1&recIds=ETOCCN606442712

Investigating interface states and oxide traps in the MoS2/oxide/Si system

Authors: Coleman, E., Mirabelli, G., Bolshakov, P., Zhao, P., Caruso, E., Gity, F., Monaghan, S., Cherkaoui, K., Balestra, V., Wallace, R.M., Young, C.D., Duffy, R., Hurley, P.K.

Source: In Solid State Electronics December 2021 186

On the interpretation of MOS impedance data in both series and parallel circuit topologies

Authors: Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L., Hurley, P.K.

Source: In Solid State Electronics November 2021 185

Numerical analysis of void-induced thermal effects on GaAs/AlGaAs high power quantum well laser diodes

Authors: Gity, F., Ahmadi, V., Noshiravani, M., Abedi, K.

Source: 2006 IEEE GCC Conference (GCC) GCC Conference (GCC), 2006 IEEE. :1-6 Mar, 2006

Relation: 2006 IEEE GCC Conference

Non-physical model of lossy transmission line for circuit simulation of segmented traveling wave electroabsorption modulators

Authors: Abedi, K., Ahmadi, V., Moravvej-Farshi, M. K., Sheikhi, M. H., Gity, F.

Source: 2006 IEEE GCC Conference (GCC) GCC Conference (GCC), 2006 IEEE. :1-4 Mar, 2006

Relation: 2006 IEEE GCC Conference

A neural network model for determination of the breakdown voltage for separate absorption and multiplication region avalanche photodiode (SAM-APD)

Authors: Soroosh, M., Gity, F., Sherafat, A.R., Farahani, K., Razaghi, M.

Source: Second IFIP International Conference on Wireless and Optical Communications Networks, 2005. WOCN 2005. Wireless and optical communications networks Wireless and Optical Communications Networks, 2005. WOCN 2005. Second IFIP International Conference on. :173-177 2005

Relation: 2005 International Conference on Wireless and Optical Communications Networks

Modeling the Effects of Interface Traps on the Static and Dynamic Characteristics of Ge/Si Avalanche Photodiodes

Authors: Gity, F., Hayes, J. M., Corbett, B., Morrison, A. P.

Source: IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 47(6):849-857 Jun, 2011

The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices

Authors: Gammon, P. M., Li, F., Chan, C. W., Sanchez, A., Hindmarsh, S., Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A., Gardner, J. W.

Source: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016

Relation: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)

Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode

Authors: Yang, H., Daunt, C. L. L. M., Gity, F., Lee, K.-H., Han, W., Corbett, B., Peters, F. H.

Source: IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 22(23):1747-1749 Dec, 2010

Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode

Authors: Gity, F., Moghaddasi, M. N., Ansari, L.

Source: 2008 9th International Conference on Laser and Fiber-Optical Networks Modeling Laser and Fiber-Optical Networks Modeling, 2008. LFNM 2008. 9th International Conference on. :26-28 Oct, 2008

Relation: 2008 International Conference on Laser and Fiber-Optical Networks Modeling (LFNM)

Modeling and numerical analysis of static, dynamic and wavelength chirp characteristics of asymmetric multiple quantum well lasers

Authors: Ansari, L., Gity, F.

Source: 2008 4th International Conference on Advanced Optoelectronics and Lasers Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on. :236-238 Sep, 2008

Relation: 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

Modeling the Effects of Deep Level Traps and Carrier Transport on the L-I characteristic, Transient Response and Wavelength Chirp of SCH-QW Lasers

Authors: Gity, F., Mirzakuchaki, S., Zarifkar, A., Ansari, L.

Source: 2007 IFIP International Conference on Wireless and Optical Communications Networks Wireless and Optical Communications Networks, 2007. WOCN '07. IFIP International Conference on. :1-4 Jul, 2007

Relation: 2007 IFIP International Conference on Wireless and Optical Communications Networks