Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy.

Authors: Atsushi Okada, Shikun He, Bo Gu, Shun Kanai, Soumyanarayanan, Anjan, Sze Ter Lim, Michael Tran, Michiyasu Mori, Sadamichi Maekawa, Fumihiro Matsukura, Hideo Ohno, Panagopoulos, Christos

Source: Proceedings of the National Academy of Sciences of the United States of America; 4/11/2017, Vol. 114 Issue 15, p3815-3820, 6p

Subject Terms: MAGNETIC properties of thin films, MAGNETIC properties of transition metal compounds, MAGNESIUM oxide, SPINTRONICS, MAGNETIZATION, TRANSITION metal compounds spectra, COBALT compounds, MAGNETIC anisotropy

Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As.

Authors: Lin Chen¹, Fumihiro Matsukura^1,2,3 f-matsu@wpi-aimr.tohoku.ac.jp, Hideo Ohno^1,2,3

Source: Physical Review Letters. 7/31/2015, Vol. 115 Issue 5, p057204-1-057204-5. 5p.

Subject Terms: *ELECTRIC fields, *SEMICONDUCTORS, *ELECTROMAGNETIC waves, *ELECTROMAGNETIC theory, *ELECTRIC field strength

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages.

Authors: Shun Kanai¹, sct273@riec.tohoku.ac.jp, Gajek, Martin², Worledge, D. C.², Fumihiro Matsukura^1,3,4, Hideo Ohno^1,3,4

Source: Applied Physics Letters; 12/15/2014, Vol. 105 Issue 24, p1-4, 4p, 1 Color Photograph, 1 Diagram, 3 Graphs

Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation.

Authors: Shun Kanai¹, Masahito Tsujikawa^2,3, Yoshio Miura^3,4, Masafumi Shirai^2,3, Fumihiro Matsukura^1,3,5, f-matsu@wpi-aimr.tohoku.ac.jp, Hideo Ohno^1,3,5

Source: Applied Physics Letters; 12/1/2014, Vol. 105 Issue 22, p1-4, 4p, 1 Chart, 3 Graphs

Properties of (Ga,Mn)As codoped with Li.

Authors: Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^2,3, f-matsu@wpi-aimr.tohoku.ac.jp, Hideo Ohno^1,2,3

Source: Applied Physics Letters; 6/2/2014, Vol. 104 Issue 22, p1-4, 4p, 5 Graphs

Electrically Defined Ferromagnetic Nanodots.

Authors: Daichi Chiba¹, Fumihiro Matsukura¹, Hideo Ohno¹

Source: Nano Letters. Nov2010, Vol. 10 Issue 11, p4505-4508. 4p.

Subject Terms: *FERROMAGNETIC materials, *NANOTECHNOLOGY, *ELECTRIC fields, *GALLIUM arsenide, *PARTICLE size distribution, *THIN films, *SEMICONDUCTORS, *NANOSTRUCTURED materials

Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li.

Authors: Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^2,3, f-matsu@wpi-aimr.tohoku.ac.jp, Hideo Ohno^1,2,3

Source: Applied Physics Letters; 3/14/2016, Vol. 108 Issue 11, p1-3, 3p, 3 Graphs

Magnetization dynamics and related phenomena in semiconductors with ferromagnetism.

Authors: Lin Chen, Jianhua Zhao, Dieter Weiss, Christian H. Back, Fumihiro Matsukura, Hideo Ohno

Source: Journal of Semiconductors; Aug2019, Vol. 40 Issue 8, p1-1, 1p

Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1− x Sb x )2Te3.

Authors: Sachin Gupta, Shun Kanai, Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Feb2018, Vol. 57 Issue 2, p1-1, 1p

Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates.

Authors: Yohei Hayashi, Yuki Hibino, Fumihiro Matsukura, Kazumoto Miwa, Shimpei Ono, Takamasa Hirai, Tomohiro Koyama, Hideo Ohno, Daichi Chiba

Source: Applied Physics Express; Jan2018, Vol. 11 Issue 1, p1-1, 1p

Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr.

Authors: Sachin Gupta, Shun Kanai, Fumihiro Matsukura, Hideo Ohno

Source: Applied Physics Express; Oct2017, Vol. 10 Issue 10, p1-1, 1p

Magnetic properties of FeV/MgO-based structures.

Authors: Mathias Bersweiler, Kyota Watanabe, Hideo Sato, Fumihiro Matsukura, Hideo Ohno

Source: Applied Physics Express; Aug2017, Vol. 10 Issue 8, p1-1, 1p

Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers.

Authors: Kyota Watanabe, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Aug2017, Vol. 56 Issue 8, p1-1, 1p

Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions.

Authors: Shun Kanai, Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Aug2017, Vol. 56 Issue 8, p1-1, 1p

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance.

Authors: Motoya Shinozaki, Eriko Hirayama, Shun Kanai, Hideo Sato, Fumihiro Matsukura, Hideo Ohno

Source: Applied Physics Express; Jan2017, Vol. 10 Issue 1, p1-1, 1p

Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate.

Authors: Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Sep2015, Vol. 54 Issue 9, p1-1, 1p

Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy.

Authors: Sophie D’Ambrosio, Lin Chen, Hiroyasu Nakayama, Fumihiro Matsukura, Tomasz Dietl, Hideo Ohno

Source: Japanese Journal of Applied Physics; Sep2015, Vol. 54 Issue 9, p1-1, 1p

Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses.

Authors: Kyota Watanabe, Shinya Ishikawa, Hideo Sato, Shoji Ikeda, Michihiko Yamanouchi, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p

In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis.

Authors: Eriko Hirayama, Shun Kanai, Koji Sato, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Source: Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p

Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells

Authors: Ryota Terauchi, Ryota Terauchi, Yuzo Ohno, Yuzo Ohno, Taro Adachi, Taro Adachi, Arao Sato, Arao Sato, Fumihiro Matsukura, Fumihiro Matsukura, Atsushi Tackeuchi, Atsushi Tackeuchi, Hideo Ohno, Hideo Ohno

Source: Japanese Journal of Applied Physics; April 1999, Vol. 38 Issue: 4 p2549-2549, 1p