Altimetry in a Regional Tropical Sea [Space Agencies]

Authors: Gourdeau, L., Djath, B., Ganachaud, A., Nino, F., Birol, F., Verron, J., Fuller, N.

Source: IEEE Geoscience and Remote Sensing Magazine IEEE Geosci. Remote Sens. Mag. Geoscience and Remote Sensing Magazine, IEEE. 5(3):44-52 Sep, 2017

An Undergraduate Research Experience Studying Ras and Ras Mutants

Authors: Griffeth, N., Batista, N., Grosso, T., Arianna, G., Bhatia, R., Boukerche, F., Crispi, N., Fuller, N., Gauza, P., Kingsbury, L., Krynski, K., Levine, A., Ma, R. Y., Nam, J., Pearl, E., Rosa, A., Salarbux, S., Sun, D.

Source: IEEE Transactions on Education IEEE Trans. Educ. Education, IEEE Transactions on. 59(2):91-97 May, 2016

Projecting the compound effects of climate change and white-nose syndrome on North American bat species

Authors: McClure, Meredith L., Hranac, Carter R., Haase, Catherine G., McGinnis, Seth, Dickson, Brett G., Hayman, David T.S., McGuire, Liam P., Lausen, Cori L., Plowright, Raina K., Fuller, N., Olson, Sarah H.

Source: In Climate Change Ecology December 2022 3

Patternable low-кmaterial for “greener” semiconductor manufacturing

Authors: Lin, Qinghuang, Chen, S.T., Nelson, A., Brock, P., Cohen, S., Davis, B., Fuller, N., Gambino, J., Kaplan, R., Kwong, R., Liniger, E., Neumayer, D., Patel, J., Shobha, H., Sooriyakumaran, R., Purushothaman, S., Spooner, T., Miller, R., Allen, R., Wisnieff, R.

Source: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :975-978 Nov, 2010

Relation: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Gate-all-around silicon nanowire MOSFETs and circuits

Authors: Sleight, J. W., Bangsaruntip, S., Majumdar, A., Cohen, G. M., Zhang, Y., Engelmann, S. U., Fuller, N. C. M., Gignac, L. M., Mittal, S., Newbury, J. S., Frank, M. M., Chang, J., Guillorn, M.

Source: 68th Device Research Conference Device Research Conference (DRC), 2010. :269-272 Jun, 2010

Relation: 2010 68th Annual Device Research Conference (DRC)

Electronic structure, metamagnetism and thermopower of LaSiFe$_{12}$ and interstitially doped LaSiFe$_{12}$

Authors: Gercsi, Z., Fuller, N., Sandeman, K. G., Fujita, A.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1407.7975

BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process

Authors: Iijima, T., Lin, Q., Chen, S., Labelle, C., Fuller, N., Ponoth, S., Cohen, S., Lloyd, J., Dunn, D., Muzzy, C., Gill, J., Nitta, S., McGahay, V., Tyberg, C., Spooner, T., Nye, H.

Source: 2006 International Interconnect Technology Conference Interconnect Technology Conference, 2006 International. :21-23 2006

Relation: 2006 International Interconnect Technology Conference

Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing

Authors: Dalton, T.J., Fuller, N., Tweedie, C., Dunn, D., Labelle, C., Gates, S., Colburn, M., Chen, S.T., Lai, T., Dellaguardia, R., Petrarca, K., Dziobkowski, C., Kumar, K., Siddiqui, S.

Source: Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Interconnect technology Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International. :154-156 2004

Relation: Proceedings of the IEEE 2004 International Interconnect Technology Conference

Semi-empirical model to calculate potential radiation exposure on board airplane during solar particle events

Authors: Lantos, P., Fuller, N.

Source: IEEE Transactions on Plasma Science IEEE Trans. Plasma Sci. Plasma Science, IEEE Transactions on. 32(4):1468-1477 Aug, 2004

Trigate 6T SRAM scaling to 0.06 µm2

Authors: Guillorna, M., Chang, J., Pyzyna, A., Engelmann, S., Joseph, E., Fletcher, B., Cabral, C., Lin, C.-H., Bryant, A., Darnon, M., Ott, J., Lavoie, C., Frank, M., Gignac, L., Newbury, J., Wang, C., Klaus, D., Kratschmer, E., Bucchignano, J., To, B., Graham, W., Lauer, I., Sikorski, E., Carter, S., Narayanan, V., Fuller, N., Zhang, Y., Haensch, W.

Source: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-3 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Authors: Kawasaki, H., Basker, V. S., Yamashita, T., Lin, C.-H., Zhu, Y., Faltermeier, J., Schmitz, S., Cummings, J., Kanakasabapathy, S., Adhikari, H., Jagannathan, H., Kumar, A., Maitra, K., Wang, J., Yeh, C.-C., Wang, C., Khater, M., Guillorn, M., Fuller, N., Chang, J., Chang, L., Muralidhar, R., Yagishita, A., Miller, R., Ouyang, Q., Zhang, Y., Paruchuri, V. K., Bu, H., Doris, B., Takayanagi, M., Haensch, W., McHerron, D., O'Neill, J., Ishimaru, K.

Source: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Authors: Bangsaruntip, S., Cohen, G. M., Majumdar, A., Zhang, Y., Engelmann, S. U., Fuller, N. C. M., Gignac, L. M., Mittal, S., Newbury, J. S., Guillorn, M., Barwicz, T., Sekaric, L., Frank, M. M., Sleight, J. W.

Source: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond

Authors: Kawasaki, H., Khater, M., Guillorn, M., Fuller, N., Chang, J., Kanakasabapathy, S., Chang, L., Muralidhar, R., Babich, K., Yang, Q., Ott, J., Klaus, D., Kratschmer, E., Sikorski, E., Miller, R., Viswanathan, R., Zhang, Y., Silverman, J., Ouyang, Q., Yagishita, A., Takayanagi, M., Haensch, W., Ishimaru, K.

Source: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008

Relation: 2008 IEEE International Electron Devices Meeting (IEDM)

FinFET performance advantage at 22nm: An AC perspective

Authors: Guillorn, M., Chang, J., Bryant, A., Fuller, N., Dokumaci, O., Wang, X., Newbury, J., Babich, K., Ott, J., Haran, B., Yu, R., Lavoie, C., Klaus, D., Zhang, Y., Sikorski, E., Graham, W., To, B., Lofaro, M., Tornello, J., Koli, D., Yang, B., Pyzyna, A., Neumeyer, D., Khater, M., Yagishita, A., Kawasaki, H., Haensch, W.

Source: 2008 Symposium on VLSI Technology VLSI Technology, 2008 Symposium on. :12-13 Jun, 2008

Relation: 2008 Symposium on VLSI Technology

A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology

Authors: Sankaran, S., Arai, S., Augur, R., Beck, M., Biery, G., Bolom, T., Bonilla, G., Bravo, O., Chanda, K., Chae, M., Chen, F., Clevenger, L., Cohen, S., Cowley, A., Davis, P., Demarest, J., Doyle, J., Dimitrakopoulos, C., Economikos, L., Edelstein, D., Farooq, M., Filippi, R., Fitzsimmons, J., Fuller, N., Gates, S. M., Greco, S. E., Grill, A., Grunow, S., Hannon, R., Ida, K., Jung, D., Kaltalioglu, E., Kelling, M., Ko, T., Kumar, K., Labelle, C., Landis, H., Lane, M.W., Landers, W., Lee, M., Li, W., Liniger, E., Liu, X., Lloyd, J. R., Liu, W., Lustig, N., Malone, K., Marokkey, S., Matusiewicz, G., McLaughlin, P. S., McLaughlin, P. V., Mehta, S., Melville, I., Miyata, K., Moon, B., Nitta, S., Nguyen, D., Nicholson, L., Nielsen, D., Ong, P., Patel, K., Patel, V., Park, W., Pellerin, J., Ponoth, S., Petrarca, K., Rath, D., Restaino, D., Rhee, S., Ryan, E.T., Shoba, H., Simon, A., Simonyi, E., Shaw, T.M., Spooner, T., Standaert, T., Sucharitaves, J., Tian, C., Wendt, H., Werking, J., Widodo, J., Wiggins, L., Wisnieff, R., Ivers, T.

Source: 2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006

Relation: 2006 International Electron Devices Meeting

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

Authors: Guillorn, M.A., Chang, J., Pyzyna, A., Engelmann, S., Glodde, M., Joseph, E., Bruce, R., Ott, J.A., Majumdar, A., Liu, F., Brink, M., Bangsaruntip, S., Khater, M., Mauer, S., Lauer, I., Lavoie, C., Zhang, Z., Newbury, J., Kratschmer, E., Klaus, D.P., Bucchignano, J., To, B., Graham, W., Sikorski, E., Narayanan, V., Fuller, N., Haensch, W.

Source: 2011 Symposium on VLSI Technology - Digest of Technical Papers VLSI Technology (VLSIT), 2011 Symposium on. :64-65 Jun, 2011

Relation: 2011 IEEE Symposium on VLSI Technology

Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively coupled Cl2-Ar plasmas.

Authors: Fuller, N. C. M., Herman, Irving P., Donnelly, Vincent M.

Source: Journal of Applied Physics; October 1 2001, Vol. 90 Issue 7, p3182-3191, 10p

Diagnostics of inductively coupled chlorine plasmas: measurement of Cl2+ and Cl+ densities.

Authors: Malyshev, M. V., Fuller, N. C. M., Bogart, K. H. A.

Source: Journal of Applied Physics; September 1 2000, Vol. 88 Issue 5, p2246-2251, 6p

Coastal applications from nadir altimetry: Example of the X-TRACK regional products

Authors: Birol, F., Fuller, N., Lyard, F., Cancet, M., Niño, F., Delebecque, C., Fleury, S., Toublanc, F., Melet, A., Saraceno, M., Léger, F.

Source: In Advances in Space Research 15 February 2017 59(4):936-953

Bioelectrical impedance analysis: the electronic skin-fold caliper?

Authors: Ward, L., Cornish, B., Fuller, N., Dewit, O., Elia, M., Thomas, B.

Source: Proceedings of the 2nd International Conference on Bioelectromagnetism (Cat. No.98TH8269) Bioelectromagnetism Bioelectromagnetism, 1998. Proceedings of the 2nd International Conference on. :101-102 1998

Relation: Proceedings of the 2nd International Conference on Bioelectromagnetism