Automatic Defect Detection in Epitaxial Layers by Micro Photoluminescence Imaging

Authors: Frascaroli, J., Tonini, M., Colombo, S., Livellara, L., Mariani, L., Targa, P., Fumagalli, R., Samu, V., Nagy, M., Molnar, G., Horvath, A., Bartal, Z., Kiss, Z., Sipocz, T., Mica, I.

Source: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 35(3):540-545 Aug, 2022

(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation
High purity and high mobility semoiconductors 16 (Symposium)

Authors: Mica, I., Roffarello, P. Monge, Dutartre, D., Basso, M., Abbadie, A., Frascaroli, J., Tonini, M., Livellara, L., Mari, G. M., Bertaiola, S.

Source: ECS transactions. 102(4):29-38

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN606899202&indx=1&recIds=ETOCCN606899202

(Invited) Analog HfO~2-RRAM Switches for Neural Networks
Nanvolatile memories (Symposium)

Authors: Covi, E., Brivio, S., Frascaroli, J., Fanciulli, M., Spiga, S.

Source: ECS transactions. 75(32):85-94

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN602357707&indx=1&recIds=ETOCCN602357707

Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals

Authors: Mastromatteo, M., DeSalvador, D., Napolitani, E., Arduca, E., Seguini, G., Frascaroli, J., Perego, M., Nicotra, G., Spinella, C., Lenardi, C.

Source: JOURNAL OF MATERIALS CHEMISTRY. C. 4(16):3531-3539

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN377542653&indx=1&recIds=ETOCRN377542653

Thermodynamic stability of high phosphorus concentration in silicon nanostructures

Authors: Perego, M., Seguini, G., Arduca, E., Frascaroli, J., DeSalvador, D., Mastromatteo, M., Carnera, A., Nicotra, G., Scuderi, M., Spinella, C.

Source: NANOSCALE -CAMBRIDGE-. 7(34):14469-14475

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Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Authors: Mastromatteo, M., Arduca, E., Napolitani, E., Nicotra, G., De Salvador, D., Bacci, L., Frascaroli, J., Seguini, G., Scuderi, M., Impellizzeri, G.

Source: SURFACE AND INTERFACE ANALYSIS. 46(SUPP/1):393-396

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN363350316&indx=1&recIds=ETOCRN363350316

Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition

Authors: Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.

Source: PHYSICA STATUS SOLIDI A APPLICATIONS AND MATERIALS SCIENCE. 210(4):732-736

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN330031242&indx=1&recIds=ETOCRN330031242

Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

Authors: Brivio, S., Frascaroli, J., Spiga, S.

Source: Applied physics letters. 107(2)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150558895.0x000001&indx=1&recIds=ETOCvdc_100150558895.0x000001

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Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices.

Authors: Brivio, S., Frascaroli, J., Spiga, S.

Source: Applied Physics Letters; 7/13/2015, Vol. 107 Issue 2, p023504-1-023504-5, 5p, 1 Diagram, 4 Graphs

Subject Terms: METAL oxide semiconductors, INTERFACES (Physical sciences), TITANIUM nitride, SWITCHING theory, POLARITY (Physics), DISSOLUTION (Chemistry)

Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition.

Authors: Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.

Source: Physica Status Solidi. A: Applications & Materials Science; Apr2013, Vol. 210 Issue 4, p732-736, 5p

Surface passivation for ultrathin Al2O3layers grown at low temperature by thermal atomic layer deposition

Authors: Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.

Source: Physica Status Solidi (A) - Applications and Materials Science; April 2013, Vol. 210 Issue: 4 p732-736, 5p