Effects of stress concentration on metal voiding during dielectric deposition

Authors: Naeem, M.D., Flaitz, P.L., Chidambarrao, D.

Source: Twenty Fourth IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.99CH36330) Electronics manufacturing technology Electronics Manufacturing Technology Symposium, 1999. Twenty-Fourth IEEE/CPMT. :270-275 1999

Relation: Twenty Fourth IEEE/CPMT International Electronics Manufacturing Technology Symposium

Integration of 10 Gb/sec silicon lateral trench photodetector with high-performance CMOS

Authors: Yang, M., Schaub, J.D., Rogers, D.L., Griesemer, J.A., Boyd, D.C., Zhang, B., Rodier, F., Flaitz, P.L., McMurray, J.S., Chan, K.K., Kim, B., Breitwisch, M.J., Walko, J.P., Pendleton, D., Holloway, K.L., Ritter, M.B., Kash, J.A., Leong, M.

Source: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :41-42 2003

Relation: 2003 Symposium on VLSI Technology. Digest of Technical Papers

Ionized-PVD Stacked Barrier Structure of TaN/TaRu for 32 nm BEOL Integration
Advanced Metallization Conference

Authors: Nogami, T., Yang, C.-C., Rossnagel, S.M., Penny, C.J., Canaperi, D.F., Kelly, J.J., Flaitz, P.L., DeHaven, P.W., Shaw, T.M., Cohen, S.A.

Source: ADVANCED METALLIZATION CONFERENCE. :139-146

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN074204453&indx=1&recIds=ETOCCN074204453

Electromigration Reliability in Nanoscale Cu Interconnects
Materials and hyperintegration challenges in next-generation interconnect technology

Authors: Hu, C.K., Gignac, L.M., Baker-O Neal, B.C., Bonilla, G., Liniger, E.G., Flaitz, P.L.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. 1036:23-33

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN072038860&indx=1&recIds=ETOCCN072038860

Atom-Probe Tomography of Semiconductor Materials and Device Structures

Authors: Lauhon, L.J., Adusumilli, P., Ronsheim, P., Flaitz, P.L., Lawrence, D.

Source: MRS BULLETIN- MATERIALS RESEARCH SOCIETY. 34(10):738-743

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN259179542&indx=1&recIds=ETOCRN259179542

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects
Materials and Processes for Advanced Interconnects for Microelectronics

Authors: Simon, A.H., Bolom, T., Tang, T.J., Baker, B., Peters, C., Rhoads, B., Flaitz, P.L., Sankaran, S., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 1079:35-40

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN248591818&indx=1&recIds=ETOCRN248591818

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects
Materials and processes for advanced interconnects for microelectronics

Authors: Simon, A.H., Bolom, T., Tang, T.J., Baker, B., Peters, C., Rhoads, B., Flaitz, P.L., Sankaran, S., Grunow, S.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. . 1079 (2008):35-40

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN071958620&indx=1&recIds=ETOCCN071958620

On the dynamic resistance and reliability of phase change memory.

Authors: Rajendran, B., Lee, M.-H., Breitwisch, M., Burr, G.W., Shih, Y.-H., Cheek, R., Schrott, A., Chen, C.-F., Lamorey, M., Joseph, E., Zhu, Y., Dasaka, R., Flaitz, P.L., Baumann, F.H., Lung, H.-L., Lam, C.

Source: 2008 Symposium on VLSI Technology; 2008, p96-97, 2p