Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si

Authors: Mouriño, Paula, Mercadé, Laura, Lozano, Miguel Sinusía, Resta, Raquel, Griol, Amadeu, Saddik, Karim Ben, Barrigón, Enrique, Fernández-Garrido, Sergio, García, Basilio Javier, Martínez, Alejandro, Gómez, Víctor J.

Subject Terms: Physics - Optics, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2403.19230

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Authors: Fernández-Garrido, Sergio, Zettler, Johannes K., Geelhaar, Lutz, Brandt, Oliver

Source: Nano Lett. 2015, 15, 3, 1930

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2402.01757

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Authors: Fernández-Garrido, Sergio, Kong, Xiang, Gotschke, Tobias, Calarco, Raffaella, Geelhaar, Lutz, Trampert, Achim, Brandt, Oliver

Source: Nano Lett. 2012, 12, 12, 6119

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2402.01755

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Authors: Fernández-Garrido, Sergio, Kaganer, Vladimir M., Sabelfeld, Karl K., Gotschke, Tobias, Grandal, Javier, Calleja, Enrique, Geelhaar, Lutz, Brandt, Oliver

Source: Nano Lett. 2013, 13, 7, 3274

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2402.01756

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

Authors: Fernàndez-Garrido, Sergio, Ubben, Kai U., Herfort, Jens, Gao, Cunxu, Brandt, Oliver

Source: Appl. Phys. Lett. 101, 032404 (2012)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2401.16887

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Authors: Fernández-Garrido, Sergio, Ramsteiner, Manfred, Gao, Guanhui, Galves, Lauren A., Sharma, Bharat, Corfdir, Pierre, Calabrese, Gabriele, Schiaber, Ziani de Souza, Pfüller, Carsten, Trampert, Achim, Lopes, João Marcelo J., Brandt, Oliver, Geelhaar, Lutz

Source: Nano Lett. 2017, 17, 9, 5213

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2401.16874

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Authors: Zettler, Johannes K., Corfdir, Pierre, Hauswald, Christian, Luna, Esperanza, Jahn, Uwe, Flissikowski, Timur, Schmidt, Emanuel, Ronning, Carsten, Trampert, Achim, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Fernández-Garrido, Sergio

Source: Nano Letters 2016, 16, 2, 973

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2401.16868

Polarity-induced selective area epitaxy of GaN nanowires

Authors: Schiaber, Ziani de Souza, Calabrese, Gabriele, Kong, Xiang, Trampert, Achim, Jenichen, Bernd, da Silva, José Humberto Dias, Geelhaar, Lutz, Brandt, Oliver, Fernández-Garrido, Sergio

Source: Nano Lett. 2017, 17, 63

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/2401.16514

X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

Authors: Kaganer, Vladimir M., Konovalov, Oleg V., Calabrese, Gabriele, van Treeck, David, Kwasniewski, Albert, Richter, Carsten, Fernández-Garrido, Sergio, Brandt, Oliver

Source: J. Appl. Cryst. 56, 439-448 (2023)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2207.04817

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Authors: Auzelle, Thomas, Sinito, Chiara, Lähnemann, Jonas, Gao, Guanhui, Flissikowski, Timur, Trampert, Achim, Fernández-Garrido, Sergio, Brandt, Oliver

Source: Physical Review Applied, 17, 044030 (2022)

Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2111.12969

A growth diagram for chemical beam epitaxy of GaP$_{1-x}$N$_{x}$ alloys on nominally $(001)$-oriented GaP-on-Si substrates

Authors: Saddik, Karim Ben, García, Basilio Javier, Fernández-Garrido, Sergio

Source: APL Mater. 9, 121101 (2021)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2107.07848

Accessibility – Health Literacy – Health Information

Contributors: Ahrens, Sarah, Schulz, Rebecca, Kröger, Janina, Fernández-Garrido, Sergio, Keller, Loraine, Rink, Isabel

Subject Terms: Accessibility, barrier-free access, health communication, Health Information, health literacy, Accessible Medical Communication, Patient-friendly

File Description: application/pdf

Relation: Easy – Plain – Accessible

Access URL: https://library.oapen.org/handle/20.500.12657/76567

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law

Authors: Kaganer, Vladimir M., Konovalov, Oleg V., Fernández-Garrido, Sergio

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/2008.07858

X‐ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

Authors: Kaganer, Vladimir M., Konovalov, Oleg V., Calabrese, Gabriele, van Treeck, David, Kwasniewski, Albert, Richter, Carsten, Fernández-Garrido, Sergio, Brandt, Oliver

Source: Journal of applied crystallography. 56(2):439-448

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100182193359.0x000001&indx=1&recIds=ETOCvdc_100182193359.0x000001

Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps

Authors: Auzelle, Thomas, Ullrich, Florian, Hietzschold, Sebastian, Brackmann, Stefan, Hillebrandt, Sabina, Kowalsky, Wolfgang, Mankel, Eric, Lovrincic, Robert, Fernández-Garrido, Sergio

Source: journal: Applied Surface Science, volume: 495, pages: 143514 and, year: 2019

Subject Terms: Physics - Applied Physics, Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1908.03376

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Authors: van Treeck, David, Fernández-Garrido, Sergio, Geelhaar, Lutz

Source: Phys. Rev. Materials 4, 013404 (2020)

Subject Terms: Physics - Applied Physics, Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1907.10358

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Authors: Fernández-Garrido, Sergio, Auzelle, Thomas, Lähnemann, Jonas, Wimmer, Kilian, Tahraoui, Abbes, Brandt, Oliver

Source: Nanoscale Advances 1, 1893 (2019)

Subject Terms: Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/1905.04948

Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

Authors: van Treeck, David, Calabrese, Gabriele, Goertz, Jelle J. W., Kaganer, Vladimir M., Brandt, Oliver, Fernández-Garrido, Sergio, Geelhaar, Lutz

Source: Nano Research, Volume 11, Issue 1, 565 (2018)

Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/1801.02966

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)Electronic supplementary information (ESI) available: Quantification of the transmission electron microscopy images. See DOI: 10.1039/d1na00773d

Authors: Volkov, Roman, Borgardt, Nikolai I., Konovalov, Oleg V., Fernández-Garrido, Sergio, Brandt, Oliver, Kaganer, Vladimir M.

Source: Nanoscale advances. 4(2):562-572

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100139044957.0x000001&indx=1&recIds=ETOCvdc_100139044957.0x000001

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Authors: Pfüller, Carsten, Corfdir, Pierre, Hauswald, Christian, Flissikowski, Timur, Kong, Xiang, Zettler, Johannes K., Fernández-Garrido, Sergio, Doğan, Pınar, Grahn, Holger T., Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver

Source: Phys. Rev. B 94, 155308 (2016)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/1607.04036