Compact Modeling of Multi-Gate MOSFETs for High-Power Applications

Authors: F. Avila Herrera, Y. Hirano, M. Miura-Mattausch, T. Iizuka, H. Kikuchihara, H. J. Mattausch, A. Ito

Source: IEEE Journal of the Electron Devices Society, Vol 8, Pp 1381-1389 (2020)

Subject Terms: Compact model, short-channel effects, drain resistance effect, multi-gate MOSFET, high-voltage MOSFET, capacitances, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/9234499/; https://doaj.org/toc/2168-6734

Access URL: https://doaj.org/article/a7af63a4184048dd868b8c8987e7967e