High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs

Authors: Islam, Ahmad E., Grupen, Matt, Hughes, Gary, Popp, Andreas, Sepelak, Nicholas P., Leedy, Kevin D., Asel, Thaddeus, Zhu, Wenjuan, Miesle, Adam T., Liddy, Kyle J., Neal, Adam, Poling, Brian, Lee, Hanwool, Dryden, Daniel M., Mou, Shin, Chabak, Kelson, Walker, Dennis E., Crespo, Antonio, Heller, Eric, Green, Andrew J.

Source: NAECON 2023 - IEEE National Aerospace and Electronics Conference Aerospace and Electronics Conference, NAECON 2023 - IEEE National. :263-268 Aug, 2023

Relation: NAECON 2023 - IEEE National Aerospace and Electronics Conference

Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy

Authors: Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

Subject Terms: Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2212.12096

First Demonstration of 500 °C Operation of β-Ga2O3 MOSFET in Air

Authors: Sepelak, Nicholas P., Williams, Jeremiah, Dryden, Daniel M., Kahler, Rachel, Liddy, Kyle J., Wang, Weisong, Chabak, Kelson D., Green, Andrew J., Islam, Ahmad E.

Source: 2022 Compound Semiconductor Week (CSW) Compound Semiconductor Week (CSW), 2022. :1-2 Jun, 2022

Relation: 2022 Compound Semiconductor Week (CSW)

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes.

Authors: Hendricks, Nolan S.^1,2, nolan.hendricks.1@us.af.mil, Islam, Ahmad E.¹, Sowers, Elizabeth A.¹, Williams, Jeremiah¹, Dryden, Daniel M.¹, Liddy, Kyle J.¹, Wang, Weisong³, Speck, James S.², Green, Andrew J.¹

Source: Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-10, 10p

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes.

Authors: Hendricks, Nolan S., Islam, Ahmad E., Sowers, Elizabeth A., Williams, Jeremiah, Dryden, Daniel M., Liddy, Kyle J., Wang, Weisong, Speck, James S., Green, Andrew J.

Source: Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-10, 10p

Subject Terms: SCHOTTKY barrier diodes, DIODES, ELECTRIC breakdown, THERMIONIC emission, ELECTRONIC equipment, STRAY currents

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Authors: Gann, Katie R.¹, krg66@cornell.edu, Pieczulewski, Naomi¹, Gorsak, Cameron A.¹, Heinselman, Karen², Asel, Thaddeus J.³, Noesges, Brenton A.^3,4, Smith, Kathleen T.⁵, Dryden, Daniel M.⁶, Xing, Huili Grace^1,7,8, Nair, Hari P.¹, Muller, David A.^5,8, Thompson, Michael O.¹

Source: Journal of Applied Physics; 1/7/2024, Vol. 135 Issue 1, p1-10, 10p

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Authors: Gann, Katie R., Pieczulewski, Naomi, Gorsak, Cameron A., Heinselman, Karen, Asel, Thaddeus J., Noesges, Brenton A., Smith, Kathleen T., Dryden, Daniel M., Xing, Huili Grace, Nair, Hari P., Muller, David A., Thompson, Michael O.

Source: Journal of Applied Physics; 1/7/2024, Vol. 135 Issue 1, p1-10, 10p

Subject Terms: SCANNING transmission electron microscopy, RUTHERFORD backscattering spectrometry, MOLECULAR beam epitaxy, LOW temperatures

Defect Engineering at the Al2O3/(010) β -Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

Authors: Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

Source: IEEE transactions on electron devices. 69(10):5656-5663

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100163469277.0x000001&indx=1&recIds=ETOCvdc_100163469277.0x000001

Scaled T-Gate β -Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Authors: Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

Source: IEEE electron device letters. 43(8):1307-1310

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100157627463.0x000001&indx=1&recIds=ETOCvdc_100157627463.0x000001

Characterization of β-Ga2O3 interface and conduction band offset with GaN using a Sol-gel process of deposition

Authors: Gao, Jianyi, Kaya, Ahmet, Chopdekar, Rajesh V., Dryden, Daniel M., Takamura, Yayoi, Islam, M. Saif, Chowdhury, Srabanti

Source: 2017 75th Annual Device Research Conference (DRC) Device Research Conference (DRC), 2017 75th Annual. :1-2 Jun, 2017

Relation: 2017 75th Device Research Conference (DRC)

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Authors: Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

Source: APL materials. 11(4)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100180709917.0x000001&indx=1&recIds=ETOCvdc_100180709917.0x000001

Photogalvanic Etching of n-GaN for Three-Dimensional Electronics

Authors: Dryden, Daniel M., Nikolic, Rebecca J., Islam, M. Saif

Source: Journal of electronic materials. 48(5):3345-3350

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100161640862.0x000001&indx=1&recIds=ETOCvdc_100161640862.0x000001

Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension.

Authors: Williams, Jeremiah¹, jeremiah.williams.19@spaceforce.mil, Wang, Weisong^1,2, Hendricks, Nolan S.^1,3, nolan.hendricks.1@us.af.mil, Adams, Aaron⁴, Piel, Joshua¹, Dryden, Daniel M.¹, Liddy, Kyle¹, Sepelak, Nicholas⁵, Morell, Bradley⁶, Islam, Ahmad¹, Green, Andrew¹

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2024, Vol. 42 Issue 3, p1-8, 8p

Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension.

Authors: Williams, Jeremiah, Wang, Weisong, Hendricks, Nolan S., Adams, Aaron, Piel, Joshua, Dryden, Daniel M., Liddy, Kyle, Sepelak, Nicholas, Morell, Bradley, Islam, Ahmad, Green, Andrew

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2024, Vol. 42 Issue 3, p1-8, 8p

Subject Terms: SCHOTTKY barrier diodes, DIODES, BREAKDOWN voltage

Geographic Terms: SANTA Barbara (Calif.)

A temperature-variant method for performance modeling and economic analysis of thermoelectric generators: Linking material properties to real-world conditions

Authors: Benday, Naman S., Dryden, Daniel M., Kornbluth, Kurt, Stroeve, Pieter

Source: In Applied Energy 15 March 2017 190:764-771

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

Authors: Alhalaili, Badriyah, Dryden, Daniel M., Vidu, Ruxandra, Ghandiparsi, Soroush, Cansizoglu, Hilal, Gao, Yang, Saif Islam, M.

Source: Applied nanoscience. 8(5):1171-1177

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100130330431.0x000001&indx=1&recIds=ETOCvdc_100130330431.0x000001

Anomalous Deposition of Co-Ni Alloys in Film and Nanowire Morphologies from Citrate Baths

Authors: Dryden, Daniel M., Sun, Theodore, McCormick, Ryan, Hickey, Raymond, Vidu, Ruxandra, Stroeve, Pieter

Source: In Electrochimica Acta 1 December 2016 220:595-600

Template-based syntheses for shape controlled nanostructures

Authors: Pérez-Page, María, Yu, Erick, Li, Jun, Rahman, Masoud, Dryden, Daniel M., Vidu, Ruxandra, Stroeve, Pieter

Source: In Advances in Colloid and Interface Science August 2016 234:51-79

Dependence of the strength of van der Waals interactions on the details of the dielectric response variation
Functional surfaces/interfaces for controlling wetting and adhesion

Authors: Hopkins, Jaime C., Dryden, Daniel M., Ching, Wai-Yim, French, Roger H., Parsegian, V. Adrian, Podgornik, Rudolf

Source: Materials Research Society symposia proceedings. 1648:45-50

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN600321493&indx=1&recIds=ETOCCN600321493

Dielectric response variation and the strength of van der Waals interactions

Authors: Hopkins, Jaime C., Dryden, Daniel M., Ching, Wai-Yim, French, Roger H., Parsegian, V. Adrian, Podgornik, Rudolf

Source: In Journal of Colloid And Interface Science 1 March 2014 417:278-284