Tunable Chirality and Helicity of Bessel Twisted Beams Near the Dirac Points in Topological Metacrystal

Authors: Hui, Yuanfei, Cui, Zhiwei, Zhao, Sihan, Li, Tie, Li, Gang, He, Haijun

Source: 2024 14th International Symposium on Antennas, Propagation and EM Theory (ISAPE) Antennas, Propagation and EM Theory (ISAPE), 2024 14th International Symposium on. :1-4 Oct, 2024

Relation: 2024 14th International Symposium on Antennas, Propagation and EM Theory (ISAPE)

Temperature-Dependent Behavior of the Dirac like Point in the Two Dimensional Photonic Crystal-Based ZRIM in the Cryogenic Region

Authors: Ghaffari, Amir Hosein, Zandi, Hesam

Source: 2022 6th International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) Millimeter-Wave and Terahertz Technologies (MMWaTT), 2022 6th International Conference on. :1-5 Dec, 2022

Relation: 2022 6th International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT)

High-Performance Detection of Toxic Gases Using a New Microsensor based on Graphene Field-Effect Transistor

Authors: Tamersit, Khalil, Boualleg, Abdelhalim, Bourouba, Hocine

Source: 2022 IEEE Workshop on Complexity in Engineering (COMPENG) Complexity in Engineering (COMPENG), 2022 IEEE Workshop on. :1-5 Jul, 2022

Relation: 2022 IEEE Workshop on Complexity in Engineering (COMPENG)

Modeling and Investigation of Electronic Transport Properties of Boron or Nitrogen Substitution Doped Single Layer Graphene

Authors: Chandrasekar, L, Pradhan, K P

Source: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Nanotechnology Materials and Devices Conference (NMDC), 2021 IEEE 16th. :1-4 Dec, 2021

Relation: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)

Symmetry driven multiple phonon topology in the hexagonal RbZnSb and CsZnSb

Authors: T., Aiswarya, Vaitheeswaran, G. ^⁎

Source: In Computational Materials Science 20 February 2025 250

Modeling the Electrostatics of 2-Terminal Boron or Nitrogen Substitution Doped Metal-Insulator-Graphene (MIG) Structure

Authors: Chandrasekar, L, Pradhan, K P

Source: 2020 5th IEEE International Conference on Emerging Electronics (ICEE) Emerging Electronics (ICEE), 2020 5th IEEE International Conference on. :1-4 Nov, 2020

Relation: 2020 5th IEEE International Conference on Emerging Electronics (ICEE)

Novel two-dimensional Dirac-Mott materials: Hexagonal M2S2 (M = Hf and Re) monolayers

Authors: Song, Yuxuan ^a, Zhang, Zixuan ^a, Guan, Lixiu ^a, Liu, Xiaobiao ^b, Li, Linyang ^{a, ⁎}

Source: In Computational Materials Science May 2025 253

Carrier Density and Quantum Capacitance Model for Doped Graphene

Authors: Chandrasekar, L, Pradhan, K P

Source: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2020 4th IEEE. :1-4 Apr, 2020

Relation: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Analytical Drain-current Model for RF Flexible Graphene Filed-Effect Transistors

Authors: Wang, Yan, Lan, Yu, Wu, Yunqiu, Xu, Yuehang

Source: 2019 IEEE Asia-Pacific Microwave Conference (APMC) Asia-Pacific Microwave Conference (APMC), 2019 IEEE. :372-374 Dec, 2019

Relation: 2019 IEEE Asia-Pacific Microwave Conference (APMC)

Detection of single-stranded DNA using the Dirac voltage change of graphene-based FETs

Authors: Yi, Jong Chang, Kim, Young June, Kim, Yi Young, Lee, Seok, Woo, Deok Ha, Kim, Chulki

Source: TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) Region 10 Conference, TENCON, 2019 - 2019 IEEE. :2051-2053 Oct, 2019

Relation: TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)

Transfer characteristics of graphene based field effect transistor (GFET) for biosensing application

Authors: Selvarajan, Reena Sri, Hamzah, Azrul Azlan, Majlis, Burhanuddin Yeop

Source: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2017 IEEE Regional Symposium on. :88-91 Aug, 2017

Relation: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

Light response and adsorption interaction of black phosphorus quantum dots and single-layer graphene phototransistor

Authors: Qi Han, Yadong Jiang, Xianchao Liu, Chaoyi Zhang, Jun Wang

Source: Frontiers of Optoelectronics, Vol 16, Iss 1, Pp 1-9 (2023)

Subject Terms: Black phosphorus quantum dots, Dirac point, Photoconduction, Adsoprtion, Applied optics. Photonics, TA1501-1820

File Description: electronic resource

Relation: https://doaj.org/toc/2095-2767

Access URL: https://doaj.org/article/53fb8e9ceaf54862b4140b0ae15fdf1b

First Principles Computation of New Topological B2X2Zn (X = Ir, Rh, Co) Compounds

Authors: Jack Howard, Alexander Rodriguez, Neel Haldolaarachchige, Kalani Hettiarachchilage

Source: J, Vol 6, Iss 1, Pp 152-163 (2023)

Subject Terms: Dirac point, topological insulator, topological crystalline insulator, first-principles, band structure, phonon modes, Science

File Description: electronic resource

Relation: https://www.mdpi.com/2571-8800/6/1/11; https://doaj.org/toc/2571-8800

Access URL: https://doaj.org/article/dd2bdc125f024baeb3308732d4e8877b

On the Paramagnetic-Like Susceptibility Peaks at Zero Magnetic Field in $$\hbox{WSe}_{2-x}\hbox{Te}_{x}$$ WSe 2 - x Te x Single Crystals

Authors: Shiu-Ming Huang, Pin-Cing Wang, Kuo-Yi Hung, Fu-En Cheng, Chang-Yu Li, Mitch Chou

Source: Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-6 (2022)

Subject Terms: Paramagnetic susceptibility peak, Topological material, Dirac point, Lattice distortion, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: https://doaj.org/toc/1556-276X

Access URL: https://doaj.org/article/21f0495da6664f65ae93897e96dbcc2e

Sensitivities of Bilayer Graphene FET Performance to Bipolar Characteristics

Authors: Jing, Li, Wensheng, Wei, Yuxing, Dai

Source: 2012 Third International Conference on Digital Manufacturing & Automation Digital Manufacturing and Automation (ICDMA), 2012 Third International Conference on. :763-766 Jul, 2012

Relation: 2012 Third International Conference on Digital Manufacturing and Automation (ICDMA)

Transport behaviors in graphene field effect transistors on boron nitride substrate

Authors: Alarcon, A., Nguyen, V. Hung, Berrada, S., Querlioz, D., Saint-Martin, J., Bournel, A., Dollfus, P.

Source: 2012 15th International Workshop on Computational Electronics Computational Electronics (IWCE), 2012 15th International Workshop on. :1-4 May, 2012

Relation: 2012 15th International Workshop on Computational Electronics (IWCE)

Quality factor enhancement in photonic crystal slabs by manipulation of the ring of exceptional points

Authors: Kaminski, Piotr M., Taghizadeh, Alireza, Breinbjerg, Olav, Mork, Jesper, Arslanagic, Samel

Source: 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Numerical Simulation of Optoelectronic Devices (NUSOD), 2017 International Conference on. :11-12 Jul, 2017

Relation: 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

A flexible biocompatible graphene sensor for real-time monitoring of PH and protein

Authors: Yoon, Hyeun Joong, Zhang, Yiyang, Kim, Seung Soo, Cheng, Mark Ming-Cheng, Zhou, Zhixian

Source: 2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on. :1104-1107 Feb, 2011

Relation: 2011 IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

The Singularity Paramagnetic Peak of Bi0.3Sb1.7Te3 with p-type Surface State

Authors: Shiu-Ming Huang, Pin-Cing Wang, Pin-Cyuan Chen, Jai-Long Hong, Cheng-Maw Cheng, Hao-Lun Jian, You-Jhih Yan, Shih-Hsun Yu, Mitch M. C. Chou

Source: Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-6 (2022)

Subject Terms: Paramagnetic susceptibility peak, Topological material, Dirac point, Surface state, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: https://doaj.org/toc/1556-276X

Access URL: https://doaj.org/article/9c3000ca2f074255acc6e035af99e4df

The effect of electrical properties of graphene transistors by heating in vacuum and atmosphere

Authors: Zhang, Qingwei, Li, Ping, Wang, Gang, Zeng, Rongzhou, Hu, Rongyan

Source: 2016 IEEE International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2016 IEEE International. :1-2 May, 2016

Relation: 2016 IEEE International Nanoelectronics Conference (INEC)