Nucleation and growth of zinc-templated mesoporous selenium nanoparticles and potential non-thermal effects during their microwave-assisted synthesis

Authors: Magdalena Borowska, Krzysztof Jankowski, Maciej Trzaskowski, Wojciech Wojtasiak, Przemysław Korpas, Sebastian Kozłowski, Daniel Gryglewski

Source: Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)

Subject Terms: Medicine, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2045-2322

Access URL: https://doaj.org/article/ce2822a2102f4204bdcf1d08cf7f78b8

On the design and linearization of transmitters for the LTE 450 base station

Authors: Dawid Rosołowski, Daniel Gryglewski, Wojciech Wojtasiak, Michał Kajczuk, Jędrzej Klocek

Source: International Journal of Electronics and Telecommunications, Vol vol. 70, Iss No 3, Pp 707-713 (2024)

Subject Terms: lte450 transmitter, doherty amplifier, transmitter linearization, digital predistortion dpd, power efficiency in 4g @5g systems, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Telecommunication, TK5101-6720

File Description: electronic resource

Relation: https://journals.pan.pl/Content/132233/25-4658-Roso%C5%82owski-sk.pdf; https://doaj.org/toc/2081-8491; https://doaj.org/toc/2300-1933

Access URL: https://doaj.org/article/f0081de8d172443189c1c5128bdb269a

A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Authors: Dawid Kuchta, Daniel Gryglewski, Wojciech Wojtasiak

Source: Micromachines, Vol 11, Iss 4, p 398 (2020)

Subject Terms: power amplifier, GaN 5G, high electron mobility transistors (HEMT), new radio, RF front-end, AESA radars, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/11/4/398; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/2423a5c297354cff9fe5952106169c6a

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Authors: Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek

Source: Micromachines, Vol 9, Iss 11, p 546 (2018)

Subject Terms: high electron mobility transistors, high electron mobility transistor (HEMT), AlGaN/GaN, ohmic contact, regrown contact, ammonothermal GaN, power amplifier, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/9/11/546; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/3b8d577d5d7240e7ba84e212384c9c80

Dielectric properties of highly resistive GaN crystals grown by ammonothermal method at microwave frequencies

Authors: Jerzy Krupka, Marcin Zając, Robert Kucharski, Daniel Gryglewski

Source: AIP Advances, Vol 6, Iss 3, Pp 035313-035313-6 (2016)

Subject Terms: Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2158-3226

Access URL: https://doaj.org/article/564414b8e1ab4b4e8a2dfc4e4623769d

A 100 W ISM 2.45 GHz-band power test system

Authors: Wojciech Wojtasiak, Daniel Gryglewski, Wojciech K. Gwarek

Source: Journal of Telecommunications and Information Technology, Iss 2 (2005)

Subject Terms: microwave precise heating, high power solid-state amplifier, push-pull GaAs FET, synthetsizer, power measurement unit, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

File Description: electronic resource

Relation: https://jtit.pl/jtit/article/view/312; https://doaj.org/toc/1509-4553; https://doaj.org/toc/1899-8852

Access URL: https://doaj.org/article/e799ab483a6149bf8dd15bba1f3da460

The 100 W class A power amplifier for L-band T/R module

Authors: Wojciech Wojtasiak, Daniel Gryglewski, Edward Sędek

Source: Journal of Telecommunications and Information Technology, Iss 1 (2002)

Subject Terms: modeling, MESFETs, finite difference time domain method, power transistors, microwave transistors, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

File Description: electronic resource

Relation: https://jtit.pl/jtit/article/view/102; https://doaj.org/toc/1509-4553; https://doaj.org/toc/1899-8852

Access URL: https://doaj.org/article/3ff20a3631a74f4ea7b9bf89b87e83f4