ANKA, a synchrotron light source for microstructure fabrication and analysis

Authors: Moser, H.O., Ballauff, M., Bechtold, V., Bertagnolli, H., Bialy, J., von Blanckenhagen, P., Bocchetta, C., Bothe, W., Coluzza, C., Danilewsky, A.N., Eichhorn, K.D., Eigenmann, B., Einfeld, D., Friedrich, L., Haller, M., Holtkamp, N., Honecker, V., Hummer, K., Huttel, E., Jacob, J., Kashikin, V., Kircher, J., Klewe-Nebenius, H., Knochel, A., Krussel, A., Kumpe, G., Moller, K.D., Mohr, J., Nagaenko, M., Pantenburg, F.J., Plesko, M., Schaper, J., Schlosser, K., Schulz, G., Schuppler, S., Schweickert, H., Seidel, I., Severgin, Y., Shukeilo, I., Steinbock, L., Steininger, R., Svandrlik, M., Williams, G., Wilson, K., Zegenhagen, J.

Source: Proceedings Particle Accelerator Conference Particle accelerators Particle Accelerator Conference, 1995., Proceedings of the 1995. 1:272-274 vol.1 1995

Relation: Proceedings Particle Accelerator Conference

Physical study of RTP N2O-and NH3-nitrided thin SiO2 films

Authors: Bouvet, D., Clivaz, P.A., Almeida, J., Coluzza, C., Margaritondo, G., Letourneau, P., Dutoit, M., Dubois, C., Dupuy, J. C., Pio, F.

Source: ESSDERC '94: 24th European Solid State Device Research Conference Solid State Device Research Conference, 1994. ESSDERC '94. 24th European. :29-32 Sep, 1994

Relation: Proceedings of the 24th European Solid State Device Research Conference

A single-photon detector for the measurement of optical activity in the deep sea.

Authors: Ameli, F., Bonori, M., Coluzza, C.

Source: Review of Scientific Instruments; December 2002, Vol. 73 Issue 12, p4164-4168, 5p

Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.

Authors: Almeida, J., Coluzza, C., dell'Orto, T.

Source: Journal of Applied Physics; January 1 1997, Vol. 81, p292-296, 5p

Photoemission electron microscopy studies of Pt/GaP(001) buried interfaces.

Authors: Almeida, J., Coluzza, C., dell'Orto, T.

Source: Journal of Applied Physics; August 1 1996, Vol. 80, p1460-1464, 5p

Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.

Authors: Terrasi, A., Coluzza, C., Margaritondo, G.

Source: Journal of Applied Physics; September 15 1995, Vol. 78, p3820-3823, 4p

Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.

Authors: Almeida, J., dell'Orto, Tiziana, Coluzza, C.

Source: Journal of Applied Physics; September 1 1995, Vol. 78, p3258-3261, 4p

Spatially localized energy shifts in the photoemission spectroscopy of insulators.

Authors: Coluzza, C., Almeida, J., dell'Orto, Tiziana

Source: Journal of Applied Physics; September 15 1994, Vol. 76, p3710-3713, 4p

Local chemical composition of HgBaCaCuO high-temperature superconductors.

Authors: Alméras, P., Dell'Orto, T., Coluzza, C.

Source: Journal of Applied Physics; July 15 1994, Vol. 76, p1100-1104, 5p

Photoemission spectromicroscopy: a new insight in the chemistry of SnOx films for gas sensors.

Authors: Sanjinés, R., Coluzza, C., Rosenfeld, D.

Source: Journal of Applied Physics; April 15 1993, Vol. 73, p3997-4003, 7p

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells.

Authors: Capizzi, M., Coluzza, C., Emililani, V.

Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1454-1459, 6p

Effect of ohmic contact conductance on the distribution of surface and bulk currents in semiconductor planar devices.

Authors: Chong-ru Huo, Ben-yuan Gu, Coluzza, C.

Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1473-1477, 5p

Scattering effects on resonant tunneling in double-barrier heterostructures.

Authors: Gu, B., Coluzza, C., Mangiantini, M.

Source: Journal of Applied Physics; May 1 1989, Vol. 65, p3510-3514, 5p

Analysis of mechanism for resonant tunneling via localized states in thin SiO2 films.

Authors: Gu, B., Mangiantini, M., Coluzza, C.

Source: Journal of Applied Physics; December 15 1988, Vol. 64, p6867-6870, 4p

A mild functionalization route to robust molecular electroactive monolayers on Si(100)
Current trends in nanoscience: from materials to applications

Authors: Zanoni, R., Aurora, A., Cattaruzza, F., Coluzza, C., Dalchiele, E. A., Decker, F., Di Santo, G., Flamini, A., Funari, L., Marrani, A. G.

Source: MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C. 26(NO 5-7):840-845

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN060124541&indx=1&recIds=ETOCCN060124541

Indented barrier resonant tunneling rectifiers.

Authors: Di Ventra, M., Papp, G., Coluzza, C.

Source: Journal of Applied Physics; October 1 1996, Vol. 80, p4174-4176, 3p

Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.

Authors: Coluzza, C., Lama, F., Frova, A.

Source: Journal of Applied Physics; September 15 1988, Vol. 64, p3304-3306, 3p

Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.

Authors: Mittiga, A., Capizzi, M., Coluzza, C.

Source: Journal of Applied Physics; May 1 1988, Vol. 63, p4748-4750, 3p

Effects of tunneling on a-Si:H Schottky barriers.

Authors: Mariucci, L., Gislon, P., Coluzza, C.

Source: Journal of Applied Physics; October 15 1987, Vol. 62, p3285-3287, 3p

Characterisation of polyaniline conductive composites
Sensors and microsystems

Authors: Longo, G., Coluzza, C., Bonfiglio, A., Beccherelli, R., Galloppa, A., Maltese, P.

Source: SENSORS AND MICROSYSTEMS. :93-97

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN044833487&indx=1&recIds=ETOCCN044833487