SSROI (super-steep retrograde on insulator) substrates for RF switch and LNA device performance enhancement

Authors: Takeuchi, Hideki, Stephenson, Robert J., Vine, Bobby, Weeks, K. Doran, Cody, Nyles W., Li, Shuyi, Connelly, Daniel, Mears, Robert J., Pfeiffer, Gerd, Aulnette, Cecile, David, Carole, Wong, Hiu-Yung

Source: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited)

Authors: Mears, Robert J, Takeuchi, Hideki, Chen, Yi-Ann, Burton, Richard, Li, Shuyi, Stephenson, Robert J., Hytha, Marek, Cody, Nyles W., Weeks, K. Doran, Choutov, Dmitri, Connelly, Daniel, Wong, Hiu-Yung

Source: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2020 4th IEEE. :1-4 Apr, 2020

Relation: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon

Authors: Connelly, Daniel, Burton, Richard, Cody, Nyles W., Fastenko, Pavel, Hytha, Marek, Stephenson, Robert, Takeuchi, Hideki, Mears, Robert

Source: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :163-165 Mar, 2018

Relation: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel

Authors: Mears, Robert J., Takeuchi, Hideki, Stephenson, Robert J., Hytha, Marek, Burton, Richard, Cody, Nyles W., Weeks, Doran, Choutov, Dmitri, Agrawal, Nidhi, Datta, Suman

Source: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE. :65-66 Feb, 2017

Relation: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers

Authors: Connelly, Daniel, Burton, Richard, Cody, Nyles W., Fastenko, Pavel, Hytha, Marek, Stephenson, Robert, Takeuchi, Hideki, Weeks, Keith Doran, Mears, Robert

Source: IEEE journal of the Electron Devices Society. 6:1173-1178

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100079910948.0x000001&indx=1&recIds=ETOCvdc_100079910948.0x000001

Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Authors: Takeuchi, Hideki, Choutov, Dmitri, Agrawal, Nidhi, Datta, Suman, Mears, Robert J., Stephenson, Robert J., Hytha, Marek, Connelly, Daniel, Fastenko, Pavel, Burton, Richard, Cody, Nyles W., Weeks, Doran

Source: IEEE journal of the Electron Devices Society. 6(1):481-486

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100098518523.0x000001&indx=1&recIds=ETOCvdc_100098518523.0x000001

Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent

In-situ pre-clean prior to epitaxy

Strained layers within semiconductor buffer structures

Semiconductor buffer structures

Strained layers within semiconductor buffer structures

Strained layers within semiconductor buffer structures

Semiconductor buffer structures

Apparatus and method for depositing silicon germanium films

SiGe rectification process

Electron mobility enhancement in (100) oxygen-inserted silicon channel

Authors: Xu, Nuo, Takeuchi, Hideki, Hytha, Marek, Cody, Nyles W., Stephenson, Robert J., Kwak, Byungil, Cha, Seon Yong, Mears, Robert J., King Liu, Tsu-Jae

Source: Applied physics letters. 107(12)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150565481.0x000001&indx=1&recIds=ETOCvdc_100150565481.0x000001

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Electron mobility enhancement in (100) oxygen-inserted silicon channel.

Authors: Nuo Xu¹, Hideki Takeuchi², Hytha, Marek², Cody, Nyles W.², Stephenson, Robert J.², Kwak, Byungil³, Seon Yong Cha³, Mears, Robert J.², Tsu-Jae King Liu¹

Source: Applied Physics Letters; 9/21/2015, Vol. 107 Issue 12, p1-5, 5p, 1 Chart, 5 Graphs