AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates

Authors: Weimann, N.G., Manfra, M.J., Hsu, J.W.P., Baldwin, K., Pfeiffer, L.N., West, K.W., Chu, S.N.G., Lang, D.V., Molnar, R.J.

Source: Proceedings. IEEE Lester Eastman Conference on High Performance Devices High performance devices High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on. :126-133 2002

Relation: IEEE Lester Eastmann Biennial Conference

In-situ etching of InP and related P materials in MOVPE chamber using PCl/sub 3/

Authors: Ougazzaden, A., Peticolas, L., Rader, M., Chu, S.N.G.

Source: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :327-330 2002

Relation: Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM)

Spot-size-converted 1.3 /spl mu/m directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85/spl deg/C

Authors: Klotzkin, D., Sheridan-Eng, J., Mazzatesta, A., Ford, G., Laquindinum, J., Chien, M., Park, M., Michel, E., Kinkel, R., Roycroft, S., Ketelsen, L.J.P., Johnson, J.E., Sputz, S.K., Lentz, J.L., Alam, M.A., Hybertsen, M.S., Reynolds, C.L., Glogovsky, K.G., Stampone, D., Chu, S.N.G., Romero, D., Freund, J., Liebenguth, R., Walters, F.

Source: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :593-596 2000

Relation: International Electron Devices Meeting. Technical Digest. IEDM

Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: Application to near-infrared intersubband transitions (1.5-4.2 /spl mu/m)

Authors: Ng, H.M., Gmachl, C., Chu, S.N.G., Cho, A.Y.

Source: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) Compound semiconductors Compound Semiconductors, 2000 IEEE International Symposium on. :245-249 2000

Relation: 2000 IEEE International Symposium on Compound Semiconductors Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors

High performance buried heterostructure 1.55 /spl mu/m wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique

Authors: Tawee Tanbun-Ek, Chu, S.N.G., Wisk, P.W., Pawelek, R., Sergent, A.M., Minch, J., Young, E., Chuang, S.L.

Source: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :702-705 1998

Relation: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials

Degradation of crystalline quality due to interfacial strain in short period lattice-matched GaInAs/InP superlattices

Authors: Gerling, M., Ritter, D., Hamm, R.A., Chu, S.N.G.

Source: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1997., International Conference on. :316-319 1997

Relation: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

All solid source molecular beam epitaxy using valved cracking cells

Authors: Baillargeon, J.N., Cho, A.Y., Hwang, W.-Y., Chu, S.N.G.

Source: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1997., International Conference on. :544-547 1997

Relation: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Authors: Ren, F., Hong, M., Kuo, J.M., Hobson, W.S., Lothian, J.R., Tsai, H.S., Lin, J., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.

Source: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 GaAs IC symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual. :18-21 1997

Relation: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

Solid source molecular beam epitaxy of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ materials for 1.3 /spl mu/m lasers

Authors: Baillargeon, J.N., Hwang, W.-Y., Chu, S.N.G., Cho, A.Y.

Source: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :99-102 1997

Relation: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

1.3 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

Authors: Hwang, W.-Y., Baillargeon, J.N., Chu, S.N.G., Sciortino, P.F., Cho, A.Y.

Source: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :109-112 1997

Relation: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE

Authors: Lee, P.P., Hwu, R.J., Sadwick, L.P., Balasubramaniam, H., Kumar, B.R., Lai, T.C., Chu, S.N.G., Alvis, R., Lareau, R.T., Wood, M.C.

Source: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors Compound semiconductors 1997 Compound Semiconductors, 1997 IEEE International Symposium on. :159-162 1997

Relation: Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE

Authors: Lum, R.M., McDonald, M.L., Bean, J.C., Vandenberg, J., Pernell, T.L., Chu, S.N.G., Robertson, A., Karp, A.

Source: Proceedings of 8th International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on. :578-581 1996

Relation: Proceedings of 8th International Conference on Indium Phosphide and Related Materials

In-situ Ga/sub 2/O/sub 3/ process for GaAs inversion/accumulation device and surface passivation applications

Authors: Passlack, M., Minghwei Hong, Mannaerts, J.P., Chu, S.N.G., Opila, R.L., Moriya, N.

Source: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :383-386 1995

Relation: Proceedings of International Electron Devices Meeting

Integrated laser/modulators for high capacity WDM transmission systems

Authors: Tsang, W.T., Johnson, J.E., Morton, P.A., Tanbun-Ek, T., Chu, S.N.G., Johnston, W.D.

Source: Proceedings of 1995 IEEE MTT-S International Microwave Symposium Microwave symposium Microwave Symposium Digest, 1995., IEEE MTT-S International. :247-250 vol.1 1995

Relation: Proceedings of 1995 IEEE MTT-S International Microwave Symposium

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Authors: Dang, G.T., Mehandru, R., Luo, B., Ren, F., Hobson, W.S., Lopata, J., Tayahi, M., Chu, S.N.G., Pearton, S.J., Chang, W., Shen, H.

Source: Journal of Lightwave Technology J. Lightwave Technol. Lightwave Technology, Journal of. 21(4):1020-1031 Apr, 2003

GaAs(C)/InAs superlattices grown by MOMBE

Authors: Abernathy, C.R., Wisk, P.W., Pearton, S.J., Hobson, W.S., Fuoss, P.H., Lamelas, F.J., Chu, S.N.G., Ren, F.

Source: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :281-285 1992

Relation: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels

Multiwavelength DFB laser array with integrated spot size converters

Authors: Ketelsen, L.J.P., Grenko, J.A., Sputz, S.K., Focht, M.W., Vandenberg, J.M., Johnson, J.E., Reynolds, C.L., Geary, J.M., Levkoff, J., Glogovsky, K.G., Stampone, D.V., Chu, S.N.G., Siegrist, T., Pernell, T.L., Walters, F.S., Sheridan-Eng, J., Lentz, J.L., Alam, M.A., People, R., Hybertsen, M.S., Isaacs, E.D., Evans-Lutterodt, K., Leibenguth, R.E., Przybyiek, G.J., Zhang, L., Feder, K., Shunk, S., Tennant, D.M., Peticolas, L.J., Romero, D.M., Freund, J.M., Falk, B.S., Tzafaras, N.N., Smith, L.E., Luther, L.C., Geva, M., Gault, W.A., Zilko, J.L.

Source: IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 36(6):641-648 Jun, 2000

High voltage GaN Schottky rectifiers

Authors: Dang, G.T., Zhang, A.P., Ren, F., Cao, X.A., Pearton, S.J., Cho, H., Han, J., Chyi, J.-I., Lee, C.-M., Chuo, C.-C., Chu, S.N.G., Wilson, R.G.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(4):692-696 Apr, 2000

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

Authors: Johnson, J.E., Ketelsen, L.J.-P., Grenko, J.A., Sputz, S.K., Vandenberg, J., Focht, M.W., Stampone, D.V., Peticolas, L.J., Smith, L.E., Glogovsky, K.G., Przybylek, G.J., Chu, S.N.G., Lentz, J.L., Tzafaras, N.N., Luther, L.C., Pernell, T.L., Walters, F.S., Romero, D.M., Freund, J.M., Reynolds, C.L., Gruezke, L.A., People, R., Alam, M.A.

Source: IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 6(1):19-25 Jan, 2000

Optical Clock Recovery Operation of a Colliding-Pulse Mode-Locked Laser Diode with Integrated Active-Passive Waveguides

Authors: Ji, C., Broeke, R.G., Fontaine, N.K., Cong, W., Cao, J., Du, Y., Chubun, N., Yoo, S.J.B., Liou, K.Y., Lothian, J.R., Chu, S.N.G., Patel, B., Hobson, W.S., Tishinin, D.V., Tsang, W.T.

Source: LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. :160-161 Oct, 2006

Relation: LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society