V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Authors: Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque

Source: IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 53-58 (2017)

Subject Terms: III-V semiconductors, tunnel FET, InAs/AlGaSb, heterojunction, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/7752805/; https://doaj.org/toc/2168-6734

Access URL: https://doaj.org/article/598af2ec20ee4785acb712283807732a

Nonstoichiometric Low-Temperature Grown GaAs Nanowires.

Authors: Adrian Díaz Álvarez, Tao Xu, Gözde Tütüncüoglu, Thomas Demonchaux, Jean-Philippe Nys, Maxime Berthe, Federico Matteini, Heidi A. Potts, David Troadec, Gilles Patriarche, Jean-François Lampin, Christophe Coinon, Anna Fontcuberta i Morral, Rafal E. Dunin-Borkowski, Philipp Ebert, Bruno Grandidier

Source: Nano Letters; Oct2015, Vol. 15 Issue 10, p6440-6445, 6p

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.

Authors: Ludovic Desplanque¹, Christophe Coinon¹, David Troadec¹, Pierre Ruterana², Gilles Patriarche³, Leo Bonato⁴, Dieter Bimberg^4,5, Xavier Wallart¹ xavier.wallart@iemn.univ-lille1.fr

Source: Nanotechnology. 6/2/2017, Vol. 28 Issue 22, p1-1. 1p.

Subject Terms: *SURFACE morphology, *VALENCE bands, *QUANTUM dots