The design of power regulation strategies for a hybrid PEMFC power system

Authors: Chen, P.J., Chen, H.C., Wang, F.C.

Source: 2016 IEEE/SICE International Symposium on System Integration (SII) System Integration (SII), 2016 IEEE/SICE International Symposium on. :893-898 Dec, 2016

Relation: 2016 IEEE/SICE International Symposium on System Integration (SII)

Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

Authors: Lu, J.P., Miles, D.S., DeLoach, J., Yue, D.F., Chen, P.J., Bonifield, T., Crank, S., Yu, S.F., Mehrad, F., Obeng, Y., Ramappa, D.A., Corum, D., Guldi, R.L., Robertson, L.S., Liu, X., Hall, L.H., Xu, Y.Q., Lin, B.Y., Griffin, A.J., Johnson, F.S., Grider, T., Mercer, D., Montgomery, C.

Source: 2006 International Workshop on Junction Technology Junction Technology, 2006. IWJT '06. International Workshop on. :127-133 2006

Relation: 2006 International Workshop on Junction Technology

Integration of high-k gate stack systems into planar CMOS process flows

Authors: Huff, H.R., Agarwal, A., Kim, Y., Perrymore, L., Riley, D., Barnett, J., Sparks, C., Freiler, M., Gebara, G., Bowers, B., Chen, P.J., Lysaght, P., Nguyen, B., Lim, J.E., Lim, S., Bersuker, G., Zeitzoff, P., Brown, G.A., Young, C., Foran, B., Shaapur, F., Hou, A., Lim, C., Alshareef, H., Borthakur, S., Derro, D.J., Bergmann, R., Larson, L.A., Gardner, M.I., Gutt, J., Murto, R.W., Torres, K., Jackson, M.D.

Source: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) Gate insulator Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on. :2-11 2001

Relation: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001

Optimizing GMR spin valves: the outlook for improved properties

Authors: Egeloff, W.F., Jr., Chen, P.J., Powell, C.J., Parks, D., McMichael, R.D., Judy, J.H., Martien, D., Berkowitz, A.E., Daughton, J.M.

Source: Seventh Biennial IEEE International Nonvolatile Memory Technology Conference. Proceedings (Cat. No.98EX141) Nonvolatile memory technology Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE. :34-37 1998

Relation: Seventh Biennial IEEE International Nonvolatile Memory Technology Conference. Proceedings

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

Authors: Yang, H., Brown, G.A., Hu, J.C., Lu, J.P., Kraft, R., Rotondaro, A.L.P., Hattangady, S.V., Chen, I.-C., Luttmer, J.D., Chapman, R.A., Chen, P.J., Tsai, H.L., Amirhekmat, B., Magel, L.K.

Source: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :459-462 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

Under layer effect on perpendicular magnetic anisotropy energies in Co20Fe60B20\MgO

Authors: Chen, P.J., Shull, R.

Source: 2017 IEEE International Magnetics Conference (INTERMAG) Magnetics Conference (INTERMAG), 2017 IEEE International. :1-1 Apr, 2017

Relation: 2017 IEEE International Magnetics Conference (INTERMAG)

Details of the Magnetization Reversal in Patterned Exchange-Biased and Unbiased Thin Films

Authors: Shull, R.D., Kabanov, Y.P., Chen, P.J., Dennis, C.L., Gornakov, V.S., Nikitenko, V.I.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 50(11):1-4 Nov, 2014

Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using /spl alpha/-Fe/sub 2/O/sub 3/ bottom spin valves

Authors: Bae, S., Zurn, S., Egelhoff, W.F., Jr., Chen, P.J., Sheppard, L., Torok, E.J., Judy, J.H.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 37(6):3960-3968 Nov, 2001

Effects of deposition process parameters on exchange coupling of /spl alpha/-Fe/sub 2/O/sub 3//NiFe bi-layers and GMR of /spl alpha/-Fe/sub 2/O/sub 3//NiFe/Cu/NiFe spin valves

Authors: Seongtae Bae, Egelhoff, W.F., Jr., Chen, P.J., Judy, J.H.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 36(5):2892-2895 Sep, 2000

Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20/MgO Films

Authors: Chen, P.J., Iunin, Y.L., Cheng, S.F., Shull, R.D.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 52(7):1-4 Jul, 2016

Magnetoelectronic devices using /spl alpha/-Fe/sub 2/O/sub 3/ bottom GMR spin-valves

Authors: Seongtae Bae, Zurn, S., Egelhoff, W.F., Jr., Chen, P.J., Sheppard, L., Torok, E.J., Judy, J.H.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 37(4):1986-1988 Jul, 2001

Structural and microscopic analyses of (/spl alpha/-Fe/sub 2/O/sub 3//Co(NiFe)/Cu/Co(NiFe)) bottom GMR spin valves

Authors: Bae, S., Egelhoff, W.F., Jr., Chen, P.J., Judy, J.H.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 36(5):2617-2619 Sep, 2000

Damping in normal metal/Ni/sub 80/Fe/sub 20/ multilayers

Authors: Rantschler, J.O., Maranville, B.B., McMichael, R.D., Chen, P.J., Eglehoff, W.F., Jr.

Source: INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Magnetics Conference Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International. :2061-2062 2005

Relation: INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference

Time and temperature dependence of high thermal stability in NiO/Co/Cu/Co/M spin valves

Authors: McMichael, R.D., Chen, P.J., Egelhoff, W.F., Jr.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 34(4):897-899 Jul, 1998

Direct measurement of barrier height at the HfO/sub 2//poly-Si interface: Band structure and local effects

Authors: Pantisano, L., Chen, P.J., Afanas'ev, V., Ragnarsson, L.-A., Pourtois, G., Groeseneken, G.

Source: Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. VLSI technology VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on. :122-123 2004

Relation: 2004 Symposium on VLSI Technology. Digest of Technical Papers

Specular electron scattering in giant magnetoresistance spin valves

Authors: Egelhoff, W.F., Jr., Chen, P.J., Powell, C.J., Stiles, M.D., McMichael, R.D., Judy, J.H., Takano, K., Berkowitz, A.E., Daughton, J.M.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 33(5):3580-3582 Sep, 1997

Anomalous properties of spin valves at elevated temperatures

Authors: McMichael, R.D., Chen, P.J., Egelhoff, W.F., Jr.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 33(5):3589-3591 Sep, 1997

Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface

Authors: Tsai, W., Ragnarsson, L., Chen, P.J., Onsia, B., Carter, R.J., Cartier, E., Young, E., Green, M., Caymax, M., De Gendt, S., Heyns, M.

Source: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :21-22 2003

Relation: 2003 Symposium on VLSI Technology. Digest of Technical Papers

Origins of coercivity increase in annealed symmetric spin valves

Authors: McMichael, R.D., Watanabe, T., Dura, J.A., Borchers, J.A., Chen, P.J., Brown, H.J., Egelhoff, W.F., Jr.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 32(5):4636-4638 Sep, 1996

Magneto-optical indicator film study of the magnetization of a symmetric spin valve

Authors: Nikitenko, V.I., Gornakov, V.S., Dedukh, L.M., Kabanov, Yu.P., Khapikov, A.F., Bennett, L.H., Chen, P.J., McMichael, R.D., Donahue, M.J., Swartzendruber, L.J., Shapiro, A.J., Brown, H.J., Egelhoff, W.F., Jr.

Source: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 32(5):4639-4641 Sep, 1996