Impact of Dual Oxide on Charge Plasma-based Junctionless Tunnel Field Effect Transistor

Authors: Chandan, Bandi Venkata, Dharmender, Dharmender, Nigam, Kaushal Kumar, Srinivasa Subbarao, P.

Source: 2024 International Conference on Integrated Circuits and Communication Systems (ICICACS) Integrated Circuits and Communication Systems (ICICACS), 2024 International Conference on. :1-5 Feb, 2024

Relation: 2024 International Conference on Integrated Circuits and Communication Systems (ICICACS)

Examination of Interface Trap Charges on Electrically Doped Tunnel FET in the Presence of High-K Dielectric

Authors: Chandan, Bandi Venkata, Dharmender, Subbarao, Penjerla Srinivasa, Nigam, Kaushal Kumar

Source: 2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2023 7th International Conference on. :1-6 Dec, 2023

Relation: 2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)

A Novel Approach to Enhance the Performance of TFET using Metal Strip Layer for High-Frequency Applications

Authors: Chandan, Bandi Venkata, Dharmender, Nigam, Kaushal Kumar

Source: 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom) Modeling, Simulation & Intelligent Computing (MoSICom), 2023 International Conference on. :339-344 Dec, 2023

Relation: 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom)

Influence of Nano Ranged Stack Gate on Junctionless Tunnel Field Effect Transistor

Authors: Chandan, Bandi Venkata, Subbarao, Penjerla

Source: 2021 7th International Conference on Signal Processing and Communication (ICSC) Signal Processing and Communication (ICSC), 2021 7th International Conference on. :343-347 Nov, 2021

Relation: 2021 7th International Conference on Signal Processing and Communication (ICSC)

Performance and Reliability Investigation of Mg2Si based Tunnel FET under Temperature Variations for High-Sensitivity Applications

Authors: Chandan, Bandi Venkata ^⁎, Nigam, Kaushal Kumar, Tanveer, Adil

Source: In Micro and Nanostructures April 2025 200

Reliability optimization of dopant-free TFET performance through advanced metal layer techniques

Authors: Chandan, Bandi Venkata, Bakshi, Madhura Prashant, Nigam, Kaushal Kumar

Source: In Microelectronics Reliability December 2024 163

Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges

Authors: Chandan, Bandi Venkata, Nigam, Kaushal Kumar

Source: In Microelectronics Reliability June 2024 157

Temperature sensitivity analysis on analog/RF and linearity metrics of electrically doped tunnel FET

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Pandey, Sunil, Sharma, Dheeraj, Kondekar, P N

Source: 2017 Conference on Information and Communication Technology (CICT) Information and Communication Technology (CICT), 2017 Conference on. :1-5 Nov, 2017

Relation: 2017 Conference on Information and Communication Technology (CICT)

Performance and reliability of N-type doping-free TFETs: the role of compound semiconductor materials.

Authors: Chandan, Bandi Venkata, Nigam, Kaushal Kumar

Source: Multiscale & Multidisciplinary Modeling, Experiments & Design; Mar2025, Vol. 8 Issue 3, p1-21, 21p

A Theoretical Performance and Reliability Investigation of a Vertical Hetero Oxide Based JL-TFET under Ideal Conditions.

Authors: Chandan, Bandi Venkata, Dharmender, Nigam, Kaushal

Source: SILICON (1876990X); Jul2024, Vol. 16 Issue 10, p4397-4413, 17p

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

Authors: Yadav, Shivendra, Sharma, Dheeraj, Chandan, Bandi Venkata, Aslam, Mohd, Soni, Deepak, Sharma, Neeraj

Source: In Superlattices and Microstructures May 2018 117:9-17

A fair comparison of the performance of charge plasma and electrostatic tunnel FETs for low-power high-frequency applications

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Rajan, Chithraja, Sharma, Dheeraj

Source: Journal of computational electronics. 18(4):1201-1206

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100125435755.0x000001&indx=1&recIds=ETOCvdc_100125435755.0x000001

Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Kondekar, Pravin, Sharma, Dheeraj

Source: Micro & nano letters. 14(10):1033-1036

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100114325553.0x000001&indx=1&recIds=ETOCvdc_100114325553.0x000001

Approach to suppress ambipolarity and improve RF and linearity performances on ED‐Tunnel FET

Authors: Chandan, Bandi Venkata, Dasari, Sushmitha, Yadav, Shivendra, Sharma, Dheeraj

Source: Micro & nano letters. 13(5):684-689

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100114324245.0x000001&indx=1&recIds=ETOCvdc_100114324245.0x000001

Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label‐free detection

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Sharma, Dheeraj

Source: Micro & nano letters. 13(4):452-456

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100114323694.0x000001&indx=1&recIds=ETOCvdc_100114323694.0x000001

Impact of gate material engineering on ED‐TFET for improving DC/analogue‐RF/linearity performances

Authors: Chandan, Bandi Venkata, Dasari, Sushmitha, Nigam, Kaushal, Yadav, Shivendra, Pandey, Sunil, Sharma, Dheeraj

Source: Micro & nano letters. 13(12):1653-1656

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100114322796.0x000001&indx=1&recIds=ETOCvdc_100114322796.0x000001

Impact of a metal-strip on a polarity-based electrically doped TFET for improvement of DC and analog/RF performance

Authors: Chandan, Bandi Venkata, Gautami, Maitreyee, Nigam, Kaushal, Sharma, Dheeraj, Tikkiwal, Vinay Anand, Yadav, Shivendra, Kumar, Satyendra

Source: Journal of computational electronics. 18(1):76-82

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100104190236.0x000001&indx=1&recIds=ETOCvdc_100104190236.0x000001

Metal-strip approach on junctionless TFET in the presence of positive charge

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Tirkey, Sukeshni, Sharma, Dheeraj

Source: Applied physics.A.Materials science & processing. 125(9)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100125616632.0x000001&indx=1&recIds=ETOCvdc_100125616632.0x000001

Dual-material dual-oxide double-gate TFET for improvement in DC characteristics, analog/RF and linearity performance

Authors: Kumar, Satyendra, Singh, Km. Sucheta, Nigam, Kaushal, Tikkiwal, Vinay Anand, Chandan, Bandi Venkata

Source: Applied physics.A.Materials science & processing. 125(5)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100125620161.0x000001&indx=1&recIds=ETOCvdc_100125620161.0x000001

Impact of interface trap charges on dopingless tunnel FET for enhancement of linearity characteristics

Authors: Chandan, Bandi Venkata, Nigam, Kaushal, Sharma, Dheeraj, Pandey, Sunil

Source: Applied physics.A.Materials science & processing. 124(7)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100125636022.0x000001&indx=1&recIds=ETOCvdc_100125636022.0x000001