Low-Power CMOS Inverter with Enhancement-Mode Operation and Matched $\mathrm{V}_{\text{TH}}$ at $\mathrm{V}_{\text{DD}} =1\ \mathrm{V}$ on Monolayer 2D Material Channel

Authors: Chou, Ang-Sheng, Hsu, Ching-Hao, Lin, Yu-Tung, Hou, Fa-Rong, Chen, Edward, Mao, Po-Sen, Li, Ming-Yang, Chou, Sui-An, Heh, Dawei, Hu, Hsiang-Chi, Chang, Yu-Sung, Wu, Wen-Chia, Huang, Zih-Syuan, Hsu, Yu-Wei, Su, Yuan-Chun, Hung, Terry Y.T., Ho, Po-Hsun, Lee, Tsung-En, Hsu, Chen-Feng, Arutchelvan, Goutham, Chung, Yun-Yan, Chien, Chao-Hsin, Vellianitis, Georgios, Woon, Wei-Yen, Cai, Jin, van Dal, Mark, Chang, Wen-Hao, Wu, Chih-I, Cheng, Chao-Ching, Radu, Iuliana P.

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Bilayer Alloy Contacts for High-Performance P-Type 2D Semiconductor Transistors

Authors: Azizi, Amin, Arutchelvan, Goutham, Safron, Nathaniel, Chuu, Chih-Piao, Lee, Yangjin, Dogan, Mehmet, Sathaiya, D. Mahaveer, Wong, H.-S. Philip, Cohen, Marvin L., Zettl, Alex, Radu, Iuliana P.

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability

Authors: Lin, Qing, Safron, Nathaniel, Zhong, Donglai, Arutchelvan, Goutham, Gilardi, Carlo, Yoo, Chanyoung, Hartanto, Jonathan, Saini, Balreen, Lai, Sheng-Chih, Pitner, Gregory, Chen, Gary, Chang, Marvin M.F., Lin, Yu-Ming, Tsai, Wilman, McIntyre, Paul C., Radu, Iuliana P.

Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024

Relation: 2024 IEEE International Electron Devices Meeting (IEDM)

Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

Authors: Chou, Ang-Sheng, Hsu, Ching-Hao, Lin, Yu-Tung, Arutchelvan, Goutham, Chen, Edward, Hung, Terry Y.T., Hsu, Chen-Feng, Chou, Sui-An, Lee, Tsung-En, Madia, Oreste, Doornbos, Gerben, Su, Yuan-Chun, Azizi, Amin, Sathaiya, D. Mahaveer, Cai, Jin, Wang, Jer-Fu, Chung, Yun-Yan, Wu, Wen-Chia, Neilson, Katie, Yun, Wei-Sheng, Hsu, Yu-Wei, Hsu, Ming-Chun, Hou, Fa-Rong, Shen, Yun-Yang, Chien, Chao-Hsin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Chang, Wen-Hao, van Dal, Mark, Cheng, Chao-Ching, Wu, Chih-I, Radu, Iuliana P.

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

Scaled contact length with low contact resistance in monolayer 2D channel transistors

Authors: Wu, Wen-Chia, Hung, Terry Y.T., Sathaiya, D. Mahaveer, Fan, Dongxu, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Li, Weisheng, Yu, Zhihao, Qiu, Hao, Yang, Ying-Mei, Lin, Kuang-I, Shen, Yun-Yang, Chang, Wen-Hao, Liew, San Lin, Hou, Vincent, Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Philip Wong, H.-S., Wang, Xinran, Chien, Chao-Hsin, Cheng, Chao-Ching, Radu, Iuliana P.

Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

Authors: Parihar, Narendra, Arutchelvan, Goutham, Franco, Jacopo, Baudot, Sylvain, Opedebeeck, Ann, Demuynck, Steven, Arimura, Hiroaki, Ragnarsson, Lars-Ake, Mitard, Jerome, De Heyn, Vincent, Mercha, Abdelkarim

Source: 2021 IEEE International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2021 IEEE International. :1-4 Oct, 2021

Relation: 2021 IEEE International Integrated Reliability Workshop (IIRW)

Contact Interface Characterization of Graphene contacted MoS2 FETs

Authors: Mootheri, Vivek, Minj, Albert, Arutchelvan, Goutham, Leonhardt, Alessandra, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Lin, Dennis

Source: 2021 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2021 IEEE International. :1-3 Jul, 2021

Relation: 2021 IEEE International Interconnect Technology Conference (IITC)

Device and Circuit Level Gate Configuration Optimization for 2D Material Field-Effect Transistors

Authors: Verreck, Devin, Arutchelvan, Goutham, Heyns, Marc M., Radu, Iuliana P.

Source: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2019 International Conference on. :1-4 Sep, 2019

Relation: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Extreme scaling enabled by MX2 transistors: variability challenges (invited)

Authors: Smets, Quentin, Arutchelvan, Goutham, Schram, Tom, Verreck, Devin, Groven, Benjamin, Cott, Daire, Ahmed, Zubair, Shi, Yuanyuan, Sutar, Surajit, Mehta, Ankit Nalin, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana

Source: 2021 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2021. :1-2 Jun, 2021

Relation: 2021 Silicon Nanoelectronics Workshop (SNW)

Interconnect-Device Co-Optimization for Field-Effect Transistors with Two-Dimensional Materials

Authors: Verreck, Devin, Arutchelvan, Goutham, Ciofi, Ivan, Heyns, Marc M., Radu, Iuliana P.

Source: 2018 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2018 IEEE International. :73-75 Jun, 2018

Relation: 2018 IEEE International Interconnect Technology Conference (IITC)

Sources of variability in scaled MoS2 FETs

Authors: Smets, Quentin, Verreck, Devin, Shi, Yuanyuan, Arutchelvan, Goutham, Groven, Benjamin, Wu, Xiangyu, Sutar, Surajit, Banerjee, Sreetama, Mehta, Ankit Nalin, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana

Source: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :3.1.1-3.1.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current

Authors: Smets, Quentin, Arutchelvan, Goutham, Jussot, Julien, Verreck, Devin, Asselberghs, Inge, Mehta, Ankit Nalin, Gaur, Abhinav, Lin, Dennis, Kazzi, Salim El, Groven, Benjamin, Caymax, Matty, Radu, Iuliana

Source: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :23.2.1-23.2.4 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling

Authors: Gupta, Anshul, Pedreira, Olalla Varela, Arutchelvan, Goutham, Zahedmanesh, Houman, Devriendt, Katia, Mertens, Hans, Tao, Zheng, Ritzenthaler, Romain, Wang, Shouhua, Radisic, Dunja, Kenis, Karine, Teugels, Lieve, Sebai, Farid, Lorant, Christophe, Jourdan, Nicolas, Chan, Boon Teik, Subramanian, Sujith, Schleicher, Filip, Hopf, Toby, Peter, Antony Premkumar, Rassoul, Nouredine, Debruyn, Haroen, Demonie, Ingrid, Siew, Yong Kong, Chiarella, Thomas, Briggs, Basoene, Zhou, Xiuju, Rosseel, Erik, De Keersgieter, An, Capogreco, Elena, Litta, Eugenio Dentoni, Boccardi, Guillaume, Baudot, Sylvain, Mannaert, Geert, Bontemps, Noemie, Sepulveda, A., Mertens, Sofie, Kim, Min-Soo, Dupuy, Emmanuel, Vandersmissen, Kevin, Paolillo, Sara, Yakimets, Dmitry, Chehab, Bilal, Favia, Paola, Drijbooms, Christel, Cousserier, Joris, Jaysankar, Manoj, Lazzarino, Frederic, Morin, Pierre, Altamirano, Efrain, Mitard, Jerome, Wilson, Christopher J., Holsteyns, Frank, Boemmels, Juergen, Demuynck, Steven, Tokei, Zsolt, Horiguchi, Naoto

Source: IEEE transactions on electron devices. 67(12):5349-5354

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100110440989.0x000001&indx=1&recIds=ETOCvdc_100110440989.0x000001

Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

Authors: Marinov, Daniil, de Marneffe, Jean-François, Smets, Quentin, Arutchelvan, Goutham, Bal, Kristof M., Voronina, Ekaterina, Rakhimova, Tatyana, Mankelevich, Yuri, El Kazzi, Salim, Nalin Mehta, Ankit, Wyndaele, Pieter-Jan, Heyne, Markus Hartmut, Zhang, Jianran, With, Patrick C., Banerjee, Sreetama, Neyts, Erik C., Asselberghs, Inge, Lin, Dennis, De Gendt, Stefan

Source: Npj 2D materials and applications. 5(1)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100194184432.0x000001&indx=1&recIds=ETOCvdc_100194184432.0x000001

Impact of device scaling on the electrical properties of MoS2 field-effect transistors.

Authors: Arutchelvan, Goutham^1,2 goutham.arutchelvan@imec.be, Smets, Quentin¹, Verreck, Devin¹, Ahmed, Zubair¹, Gaur, Abhinav², Sutar, Surajit¹, Jussot, Julien¹, Groven, Benjamin¹, Heyns, Marc^1,2, Lin, Dennis¹, Asselberghs, Inge¹, Radu, Iuliana¹

Source: Scientific Reports. 3/23/2021, Vol. 11 Issue 1, p1-11. 11p.

Subject Terms: *TRANSISTORS, *ELECTRIC properties of solids, *SEMICONDUCTORS, *ELECTROSTATICS, *SILICON

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Authors: Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., Chien, Chao-Hsin

Source: IEEE Transactions on Electron Devices; December 2023, Vol. 70 Issue: 12 p6680-6686, 7p

Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering

Authors: Mongillo, Massimo, Chiappe, Daniele, Arutchelvan, Goutham, Asselberghs, Inge, Perucchini, Marta, Manfrini, Mauricio, Lin, Dennis, Huyghebaert, Cedric, Radu, Iuliana

Source: Applied physics letters. 109(23)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150931480.0x000001&indx=1&recIds=ETOCvdc_100150931480.0x000001

Graphene based Van der Waals contacts on MoS2 field effect transistors.

Authors: Mootheri, Vivek, Arutchelvan, Goutham, Banerjee, Sreetama, Sutar, Surajit, Leonhardt, Alessandra, Boulon, Marie-Emmanuelle, Huyghebaert, Cedric, Houssa, Michel, Asselberghs, Inge, Radu, Iuliana, Heyns, Marc, Lin, Dennis

Source: 2D Materials; Jan2021, Vol. 8 Issue 1, p1-10, 10p

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