A highly integrated dual-band SiGe power amplifier that enables 256 QAM 802.11ac WLAN radio front-end designs

Authors: Huang, Chun-Wen Paul, Antognetti, Philip, Lam, Lui, Quaglietta, Tony, Doherty, Mark, Vaillancourt, William

Source: 2012 IEEE Radio Frequency Integrated Circuits Symposium Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE. :225-228 Jun, 2012

Relation: 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

A highly integrated dual band sige BiCMOS power amplifier that simplifies dual-band WLAN and MIMO front-end circuit designs

Authors: Huang, Chun-Wen Paul, Doherty, Mark, Antognetti, Philip, Lam, Lui, Vaillancourt, William

Source: 2010 IEEE MTT-S International Microwave Symposium Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International. :256-259 May, 2010

Relation: 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

Innovative architecture for dual-band WLAN and MIMO frontend module based on a single pole, three throw switch-plexer

Authors: Huang, Chun-Wen Paul, Vaillancourt, William, Antognetti, Philip, Quaglietta, Tony, McPartlin, Mike, Doherty, Mark, Masse, Christophe

Source: 2009 IEEE Radio Frequency Integrated Circuits Symposium Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE. :281-284 Jun, 2009

Relation: 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

A Silicon Germanium, High Efficiency Power Amplifier Chipset for GSM/DCS-PCS/WCDMA Handset Applications

Authors: Pusl, Joe, Sridharan, Srikanth, Helms, David, Antognetti, Philip, Doherty, Mark

Source: 2001 31st European Microwave Conference Microwave Conference, 2001. 31st European. :1-4 Sep, 2001

Relation: 2001 31st European Microwave Conference

SiGe power amplifier ICs with SWR protection for handset applications.

Authors: Pusl, Joe, Sridharan, Srikanth, Antognetti, Philip

Source: Microwave Journal; June 2001, Vol. 44 Issue 6, p100-113, 7p

System and method of transistor switch biasing in a high power semiconductor switch

SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH