Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Authors: Zhang, W., Lu, L., Li, C., Jiang, W., Wang, W., Liu, X., Abliz, A., Wan, D.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:502-507 2024