Showing 1 - 20 results of 30 Refine Results
  1. 1
    Conference

    Reliability Analysis of Multibridge Channel Field Effect Transistor

    Authors: Ganlin, Huang, Alias, N. Ezaila, Tan, M. L. Peng, Hamzah, M. N., Wahab, Yasmin Abdul, Hussin, Hanim

    Source: 2024 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2024 IEEE International Conference on. :33-36 Aug, 2024

    Relation: 2024 IEEE International Conference on Semiconductor Electronics (ICSE)

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  2. 2
    Conference

    Analysis of the Electrical Characteristics for Compact SPICE Modelling of STT-MTJ Device with Physical Parameters Variation

    Authors: Pai, M. Y. Xuan, Alias, N. Ezaila, Tan, M. L. Peng, Hamzah, Afiq, Wahab, Yasmin Abdul, Muhamad, Maizan

    Source: 2024 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2024 IEEE International Conference on. :5-8 Aug, 2024

    Relation: 2024 IEEE International Conference on Semiconductor Electronics (ICSE)

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  3. 3
    Conference

    Negative Bias Temperature Instability Analysis of a 15 nm p-channel Junctionless Fin Field Effect Transistor (p-JLFinFET)

    Authors: Hamzah, M. Naziiruddin, Alias, N. Ezaila, Peng Tan, M. L.

    Source: 2022 IEEE 20th Student Conference on Research and Development (SCOReD) Research and Development (SCOReD), 2022 IEEE 20th Student Conference on. :73-76 Nov, 2022

    Relation: 2022 IEEE 20th Student Conference on Research and Development (SCOReD)

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  4. 4
    Conference

    Performance Analysis of Junctionless Multi-Bridge Channel FET with Strained SiGe Application

    Authors: Affandi, S. Afidah, Alias, N. Ezaila, Hamzah, Afiq, Tan, M.L Peng, Hussin, Hanim

    Source: 2022 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2022 IEEE International Conference on. :17-20 Aug, 2022

    Relation: 2022 IEEE International Conference on Semiconductor Electronics (ICSE)

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  5. 5
    Conference

    Comprehensive Analysis of Gate Oxide Short in Junctionless Fin Field Effect Transistor

    Authors: Rahman, Md Wahidur, Alias, N. Ezaila, Hamzah, Afiq, Peng Tan, M. L., Kamisian, Izam

    Source: 2022 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2022 IEEE International Conference on. :73-76 Aug, 2022

    Relation: 2022 IEEE International Conference on Semiconductor Electronics (ICSE)

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  6. 6
    Conference

    Design of Low Power Gain-Cell eDRAM for 4Kb Memory Array in 130nm CMOS

    Authors: Soo, Shi Rong, Hamzah, Afiq, Alias, N. Ezaila, Kamisian, Izam, Peng Tan, Michael Loong, Isaak, Suhaila, Johari, Zaharah

    Source: 2021 International Conference on Electrical Engineering and Informatics (ICEEI) Electrical Engineering and Informatics (ICEEI), 2021 International Conference on. :1-6 Oct, 2021

    Relation: 2021 International Conference on Electrical Engineering and Informatics (ICEEI)

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  7. 7
    Conference

    A 2 Kbit Memory Array of Mixed-VT GC-eDRAM Implemented in 130nm Standard CMOS Technology

    Authors: Abdo, Hussien, Alias, N. Ezaila, Hamzah, Afiq, Kamisian, Izam, Peng Tan, M. L., Sheikh, U. Ullah

    Source: 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2021 IEEE Regional Symposium on. :153-156 Aug, 2021

    Relation: 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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  8. 8
    Conference

    An Efficient March (5n) FSM-Based Memory Built-In Self Test (MBIST) Architecture

    Authors: Nguan Kong, T. S., Alias, N. Ezaila, Hamzah, Afiq, Kamisian, Izam, Peng Tan, M. L., Sheikh, U. Ullah, Wahab, Yasmin Abdul

    Source: 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2021 IEEE Regional Symposium on. :76-79 Aug, 2021

    Relation: 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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  9. 9
    Conference

    Reliability Analysis Of Gate-All-Around Floating Gate (GAA-FG) With Variable Oxide Thickness For Flash Memory Cell

    Authors: Hamid, Farah, Alias, N. Ezaila, Hamzah, Afiq, Johari, Zaharah, Tan, M. L. Peng, Ismail, Razali, Soin, Norhayati

    Source: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2020 4th IEEE. :1-4 Apr, 2020

    Relation: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  10. 10
    Conference

    Stacking SiO2/ High-$K$ Dielectric Material in 30nm Junction-less Nanowire Transistor Optimized Using Taguchi Method for Lower Leakage Current

    Authors: Rasol, M. F. M., Hamid, F. K. A., Johari, Zaharah, Alias, N. Ezaila, Ismail, Razali

    Source: 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2019 IEEE Regional Symposium on. :1-4 Aug, 2019

    Relation: 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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  11. 11
    Conference

    Improved Sensing Properties of Amino Acid on Black Phosphorene: A Computational Study

    Authors: Shukri, Nafeesa S., Johari, Zaharah, Alias, N. Ezaila, Zakaria, N. Aini, Yusoff, M. F. M.

    Source: 2019 IEEE International Conference on Sensors and Nanotechnology Sensors and Nanotechnology, 2019 IEEE International Conference on. :1-4 Jul, 2019

    Relation: 2019 IEEE International Conference on Sensors and Nanotechnology (SENSORS & NANO)

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  12. 12
    Conference

    Hadamard Transform Improvement for HEVC using Intel AVX-512

    Authors: Ka Sing, Jackson Teh, Ullah Sheikh, Usman, Mokji, Musa, Alias, N. Ezaila

    Source: 2019 IEEE 9th Symposium on Computer Applications & Industrial Electronics (ISCAIE) Computer Applications & Industrial Electronics (ISCAIE), 2019 IEEE 9th Symposium on. :310-315 Apr, 2019

    Relation: 2019 IEEE 9th Symposium on Computer Applications & Industrial Electronics (ISCAIE)

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  13. 13
    Conference

    Graphene as Charge Storage Layer in Floating Gate Flash Memory with Highk Tunnel Barrier Engineering

    Authors: Ahmad, M. Hilman, Alias, N. Ezaila, Hamzah, Afiq, Johari, Zaharah, Abidin, M. S. Z., Ismail, Razali

    Source: 2018 IEEE Student Conference on Research and Development (SCOReD) Research and Development (SCOReD), 2018 IEEE Student Conference on. :1-5 Nov, 2018

    Relation: 2018 IEEE Student Conference on Research and Development (SCOReD)

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  14. 14
    Periodical

    Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review

    Authors: Hamzah, Afiq, Ahmad, Hilman, Tan, Michael Loong Peng, Alias, N. Ezaila, Johari, Zaharah, Ismail, Razali

    Source: Journal of nanoelectronics and optoelectronics. 14(9):1195-1214

    Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN621483997&indx=1&recIds=ETOCRN621483997

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  15. 15
    Periodical

    Warping Armchair Graphene Nanoribbon Curvature Effect on Sensing Properties: A Computational Study

    Authors: Sakina, S. H., Johari, Zaharah, Auzar, Zuriana, Alias, N. Ezaila, Mohamad, Azam, Zakaria, N. Aini

    Source: Journal of electronic materials. 47(5):2768-2775

    Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100149380042.0x000001&indx=1&recIds=ETOCvdc_100149380042.0x000001

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  16. 16
    Periodical

    Adsorption Site of Gas Molecules on Defective Armchair Graphene Nanoribbon Formed Through Ion Bombardment

    Authors: Auzar, Zuriana, Johari, Zaharah, Sakina, S. H., Alias, N. Ezaila

    Source: Journal of electronic materials. 47(2):1208-1217

    Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100148362560.0x000001&indx=1&recIds=ETOCvdc_100148362560.0x000001

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  17. 17
    Periodical

    The Electronic and Transport Properties of Defective Bilayer Graphene Nanoribbon

    Authors: Johari, Zaharah, Auzar, Zuriana, Alias, N. Ezaila

    Source: Journal of nanoelectronics and optoelectronics. 12(2):177-183

    Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN610237093&indx=1&recIds=ETOCRN610237093

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  18. 18
    Periodical

    Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

    Authors: Hamzah, Afiq, Alias, N. Ezaila, Ismail, Razali

    Source: Japanese journal of applied physics. 57(6):06KC02-06KC02

    Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN616455721&indx=1&recIds=ETOCRN616455721

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  19. 19
    Academic Journal

    Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation.

    Authors: Hamzah, Afiq (AUTHOR) mafiq@utm.my, Alias, N Ezaila (AUTHOR), Tan, Michael Loong Peng (AUTHOR), Hosseingholipourasl, Ali (AUTHOR), Ismail, Razali (AUTHOR)

    Source: Semiconductor Science & Technology. Apr2020, Vol. 35 Issue 4, p1-11. 11p.

    Subject Terms: *POISSON'S equation, *METAL oxide semiconductor field-effect transistors, *SURFACE potential, *DENSITY currents

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  20. 20
    Academic Journal

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