Probing the electrode-liquid interface using operando total-reflection X-ray absorption spectroscopy

Authors: Grespi, A., Larsson, A., Abbondanza, G., Eidhagen, J., Gajdek, D., Manidi, J., Tayal, A., Pan, J., Merte, L.R., Lundgren, E.

Source: In Surface Science October 2024 748

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
Silicon carbide and related materials 2011: selected, peer reviewed papers from the 14th international conference on silicon carbide and related materials 2011, (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Authors: Camarda, M., Canino, A., Fiorenza, P., Bongiorno, C., Severino, A., Raineri, V., La Magna, A., La Via, F., Mauceri, M., Abbondanza, G.

Source: MATERIALS SCIENCE FORUM. 717/720(1):149-152

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3C-SiC Film Growth on Si Substrates
Wide bandgap semiconductor materials and devices

Authors: Severino, A., Locke, C., Anzalone, R., Camarda, M., Piluso, N., La Magna, A., Saddow, S., Abbondanza, G., D Arrigo, G., La Via, F.

Source: ECS TRANSACTIONS. 35(6):99-116

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Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Authors: Piluso, N., Severino, A., Camarda, M., Anzalone, R., Canino, A., Condorelli, G., Abbondanza, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. 645-648(1):255-258

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Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Authors: Severino, A., Camarda, M., Piluso, N., Italia, M., Condorelli, G., Mauceri, M., Abbondanza, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. 645-648(1):167-170

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3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Authors: D Arrigo, G., Severino, A., Milazzo, G., Bongiorno, C., Piluso, N., Abbondanza, G., Mauceri, M., Condorelli, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. 645-648(1):135-138

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Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
European Conference on Silicon Carbide and Related Materials

Authors: Roccaforte, F., Iucolano, F., Giannazzo, F., Moschetti, G., Bongiorno, C., Di Franco, S., Puglisi, V., Abbondanza, G., Raineri, V.

Source: MATERIALS SCIENCE FORUM. 615-617:967-970

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Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
European Conference on Silicon Carbide and Related Materials

Authors: Bertuccio, G., Caccia, S., Nava, F., Foti, G., Puglisi, D., Lanzieri, C., Lavanga, S., Abbondanza, G., Crippa, D., Preti, F.

Source: MATERIALS SCIENCE FORUM. 615-617:845-848

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Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
European Conference on Silicon Carbide and Related Materials

Authors: Severino, A., Anzalone, R., Bongiorno, C., Italia, M., Abbondanza, G., Camarda, M., Perdicaro, L.M.S., Condorelli, G., Mauceri, M., La Via, F.

Source: MATERIALS SCIENCE FORUM. 615-617:149-152

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Thick Epitaxial Layers Growth by Chlorine Addition
European Conference on Silicon Carbide and Related Materials

Authors: La Via, F., Izzo, G., Camarda, M., Abbondanza, G., Crippa, D.

Source: MATERIALS SCIENCE FORUM. 615-617:55-60

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3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor
International Conference on Silicon Carbide and Related Materials

Authors: Anzalone, R., Severino, A., D Arrigo, G., Bongiorno, C., Fiorenza, P., Foti, G., Condorelli, G., Mauceri, M., Abbondanza, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. 600-603:243-246

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Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
International Conference on Silicon Carbide and Related Materials

Authors: Severino, A., Bongiorno, C., Anzalone, R., Abbondanza, G., Mauceri, M., Condorelli, G., Foti, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. 600-603:215-218

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SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
International Conference on Silicon Carbide and Related Materials

Authors: La Via, F., Izzo, G., Mauceri, M., Pistone, G., Condorelli, G., Perdicaro, L.M.S., Abbondanza, G., Portuese, F., Galvagno, G., Di Franco, S.

Source: MATERIALS SCIENCE FORUM. 600-603:123-126

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Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
International Conference on Silicon Carbide and Related Materials

Authors: Condorelli, G., Mauceri, M., Pistone, G., Perdicaro, L.M.S., Abbondanza, G., Portuese, F., Valente, G.L., Crippa, D., Giannazzo, F., La Via, F.

Source: MATERIALS SCIENCE FORUM. 600-603:127-130

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Very High Growth Rate Epitaxy Processes with Chlorine Addition
Silicon carbide and related materials

Authors: La Via, F., Leone, S., Mauceri, M., Pistone, G., Condorelli, G., Abbondanza, G., Portuese, F., Galvagno, G., Di Franco, S., Calcagno, L.

Source: MATERIALS SCIENCE FORUM. S 556/557:157-160

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Carbonization Study of Different Silicon Orientations
Silicon carbide and related materials

Authors: Severino, A., Bongiorno, C., Leone, S., Mauceri, M., Pistone, G., Condorelli, G., Abbondanza, G., Portuese, F., Foti, G., La Via, F.

Source: MATERIALS SCIENCE FORUM. S 556/557:171-174

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Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
Silicon carbide and related materials

Authors: Masi, M., Veneroni, A., Fiorucci, A., La Via, F., Foti, G., Mauceri, M., Leone, S., Pistone, G., Condorelli, G., Abbondanza, G.

Source: MATERIALS SCIENCE FORUM. S 556/557:93-96

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Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates
State-of-the-art program on compound semiconductors; (SOTAPOCS 45)

Authors: Severino, A., D`Arrigo, G., Leone, S., Mauceri, M., Abbondanza, G., Terrasi, A., La Via, F.

Source: ECS TRANSACTIONS. 3(5):287-298

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SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
International Conference on Silicon Carbide and Related Materials

Authors: Leone, S., Mauceri, M., Pistone, G., Abbondanza, G., Portuese, F., Abagnale, G., Valente, G. L., Crippa, D., Barbera, M., Reitano, R.

Source: MATERIALS SCIENCE FORUM. 527/529(1):179-182

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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
Silicon carbide 2006- Materials, Processing and Devices

Authors: La Via, F., Galvagno, G., Firrincieli, A., Di Franco, S., Severino, A., Leone, S., Mauceri, M., Pistone, G., Abbondanza, G., Portuese, F.

Source: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 911:443-448

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